Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FMN-1056S

FMN-1056S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 5A TO220-2

0

FMB-G16L

FMB-G16L

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 6A TO220-2

0

FMC-G28SL

FMC-G28SL

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 5A TO220F-2L

0

RM 4C

RM 4C

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 3A AXIAL

0

RG 1CV1

RG 1CV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 700MA AXIAL

0

FMX-G26S

FMX-G26S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 10A TO220F

0

FMY-1036S

FMY-1036S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 3A TO220F-2L

0

FMG-14S

FMG-14S

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 5A TO220-3

0

RM 10V1

RM 10V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.2A AXIAL

0

RM 2CV1

RM 2CV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 1.2A AXIAL

0

FMXA-1104S

FMXA-1104S

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 10A TO220F

0

RK 46

RK 46

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 3.5A AXIAL

0

FMB-G14

FMB-G14

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 3A TO220F-2L

0

RK 44

RK 44

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 3A AXIAL

0

FMX-G16S

FMX-G16S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 5A TO220F-2L

0

RP 1HV1

RP 1HV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 2KV 100MA AXIAL

0

RK 16V1

RK 16V1

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 2A AXIAL

0

FMCA-11065

FMCA-11065

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 600V 10A TO220F

0

FMXK-1086S

FMXK-1086S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 8A TO220F-2L

0

FMX-G22S

FMX-G22S

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 10A TO220F

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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