Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
EM01AV0

EM01AV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

EM 2V0

EM 2V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.2A AXIAL

0

RO 2V

RO 2V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.2A AXIAL

0

AU01ZWS

AU01ZWS

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 500MA AXIAL

0

SJPA-H3VL

SJPA-H3VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

RU 3CV

RU 3CV

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 1.5A AXIAL

0

SJPW-F6VL

SJPW-F6VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

AM01WK

AM01WK

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

EL02ZV

EL02ZV

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1.5A AXIAL

0

EU02

EU02

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

EM 1YV

EM 1YV

Sanken Electric Co., Ltd.

DIODE GEN PURP 100V 1A AXIAL

0

AK 09V0

AK 09V0

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 700MA AXIAL

0

RO 2BV1

RO 2BV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

0

RP 3FV4

RP 3FV4

Sanken Electric Co., Ltd.

DIODE GEN PURP 1.5KV 2A AXIAL

0

AS01AWS

AS01AWS

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 600MA AXIAL

0

ES01FV

ES01FV

Sanken Electric Co., Ltd.

DIODE GEN PURP 1.5KV 500MA AXIAL

0

RU 3V1

RU 3V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.5A AXIAL

0

RK 39V1

RK 39V1

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 2A AXIAL

0

RN 1ZV1

RN 1ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1.5A AXIAL

0

RK 49

RK 49

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 3.5A AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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