Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SJPL-F4V

SJPL-F4V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.5A SJP

0

SJPL-L2

SJPL-L2

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 3A SJP

0

EG 1AV1

EG 1AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 600MA AXIAL

77

SJPB-D4VR

SJPB-D4VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 1A SJP

0

FMB-G14L

FMB-G14L

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 5A TO220F-2L

54

SJPB-L4V

SJPB-L4V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 3A SJP

0

SJPB-L6VL

SJPB-L6VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 3A SJP

882

SJPA-L3VR

SJPA-L3VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 30V 3A SJP

3188

FMU-G26S

FMU-G26S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 10A TO220F

320

SJPJ-L3V

SJPJ-L3V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 30V 3A SJP

0

AU02V1

AU02V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 800MA AXIAL

2297

SJPD-D5V

SJPD-D5V

Sanken Electric Co., Ltd.

DIODE GEN PURP 500V 1A SJP

0

SJPJ-D3V

SJPJ-D3V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 30V 1A SJP

0

SJPB-L4VL

SJPB-L4VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 3A SJP

1797

AU02ZV1

AU02ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 800MA AXIAL

6903

SJPM-H4VR

SJPM-H4VR

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 2A SJP

0

RM 2V1

RM 2V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.2A AXIAL

992

AL01V1

AL01V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

8870

FMY-1106S

FMY-1106S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 10A TO220F

263

FMX-G14S

FMX-G14S

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 5A TO220F-2L

3404

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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