Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
EK 14V1

EK 14V1

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 1.5A AXIAL

1235

AM01V1

AM01V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

5243

SJPL-L2VR

SJPL-L2VR

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 3A SJP

0

SJPM-H4

SJPM-H4

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 2A SJP

0

EL 1V1

EL 1V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.5A AXIAL

1900

SJPX-H3V

SJPX-H3V

Sanken Electric Co., Ltd.

DIODE GEN PURP 300V 2A SJP

0

SJPB-H6V

SJPB-H6V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 2A SJP

0

FML-G12S

FML-G12S

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 5A TO220F-2L

66

SARS10

SARS10

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 300MA TO220

2034

EM01V1

EM01V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

1660

FMN-1106S

FMN-1106S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 10A TO220F

5028

EM 2BV1

EM 2BV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

1638

FMXA-1106S

FMXA-1106S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 10A TO220F

828

SARS01V0

SARS01V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

5655

AU01AV0

AU01AV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 500MA AXIAL

872

RF 1BV1

RF 1BV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 600MA AXIAL

822

EG01V1

EG01V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 700MA AXIAL

0

EM 2AV1

EM 2AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1.2A AXIAL

3912

SJPL-H2V

SJPL-H2V

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 2A SJP

0

SJPB-H9VL

SJPB-H9VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 2A SJP

4823

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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