Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R9G22009ASOO

R9G22009ASOO

Powerex, Inc.

DIODE FAST REC R9G 900A 2000V

0

R9G21011ASOO

R9G21011ASOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 1000V

0

R6101030XXYZ

R6101030XXYZ

Powerex, Inc.

DIODE GEN PURP 1KV 300A DO205

0

R9G20212CSOO

R9G20212CSOO

Powerex, Inc.

DIODE GP 200V 1200A DO200AB

0

R6100625XXYZ

R6100625XXYZ

Powerex, Inc.

DIODE GEN PURP 600V 250A DO205AB

0

RDS81010XX

RDS81010XX

Powerex, Inc.

DIODE GEN PURP 1KV 10000A

0

R5110410XXWA

R5110410XXWA

Powerex, Inc.

DIODE GEN PURP 400V 100A DO205AA

0

R9G20815ASOO

R9G20815ASOO

Powerex, Inc.

DIODE GP 800V 1500A DO200AB

0

R9G21409ASOO

R9G21409ASOO

Powerex, Inc.

DIODE FAST REC R9G 900A 1400V

0

R6111025XXYZ

R6111025XXYZ

Powerex, Inc.

DIODE GEN PURP 1KV 250A DO205

0

R9G23012CSOO

R9G23012CSOO

Powerex, Inc.

DIODE GEN PURP 3KV 1200A DO200AB

0

QRS1240T30

QRS1240T30

Powerex, Inc.

DIODE GEN PURP 1.2KV 263A MODULE

0

R5100215XXWA

R5100215XXWA

Powerex, Inc.

DIODE GEN PURP 200V 150A DO205AA

0

R6111030XXYZ

R6111030XXYZ

Powerex, Inc.

DIODE GEN PURP 1KV 300A DO205

0

R9G20409ASOO

R9G20409ASOO

Powerex, Inc.

DIODE FAST REC R9G 900A 400V

0

QRS1260T30

QRS1260T30

Powerex, Inc.

DIODE GEN PURP 1.2KV 427A MODULE

0

QRS0680T30

QRS0680T30

Powerex, Inc.

DIODE GEN PURP 600V 392A MODULE

0

R9G20411ASOO

R9G20411ASOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 400V

0

R9G23412CSOO

R9G23412CSOO

Powerex, Inc.

DIODE GP 3.4KV 1200A DO200AB

0

RDK82685XXOO

RDK82685XXOO

Powerex, Inc.

DIODE GP 2.6KV 10000A PUCK

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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