Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R9G20209ASOO

R9G20209ASOO

Powerex, Inc.

DIODE FAST REC R9G 900A 200V

0

R9S02630XX

R9S02630XX

Powerex, Inc.

DIODE GP 2.6KV 3935A HOCKEY PUCK

0

R6110830XXYZ

R6110830XXYZ

Powerex, Inc.

DIODE GEN PURP 800V 300A DO205AB

0

R5111010XXWA

R5111010XXWA

Powerex, Inc.

DIODE GEN PURP 1KV 100A DO205

0

R6100425XXYZ

R6100425XXYZ

Powerex, Inc.

DIODE GEN PURP 400V 250A DO205AB

0

R9G20211ASOO

R9G20211ASOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 200V

0

R9G21611ASOO

R9G21611ASOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 1600V

0

CS641230

CS641230

Powerex, Inc.

DIODE GEN PURP 1.2KV 300A MODULE

0

R5100415XXWA

R5100415XXWA

Powerex, Inc.

DIODE GEN PURP 400V 150A DO205AA

0

R9G23212CSOO

R9G23212CSOO

Powerex, Inc.

DIODE GP 3.2KV 1200A DO200AB

0

R9G22209ASOO

R9G22209ASOO

Powerex, Inc.

DIODE FAST REC R9G 900A 2200V

0

R9G22011ASOO

R9G22011ASOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 2000V

0

R6110430XXYZ

R6110430XXYZ

Powerex, Inc.

DIODE GEN PURP 400V 300A DO205AB

0

R9G20415ASOO

R9G20415ASOO

Powerex, Inc.

DIODE GP 400V 1500A DO200AB

0

R9G21009CSOO

R9G21009CSOO

Powerex, Inc.

DIODE FAST REC R9G 900A 1000V

0

R9G21211CSOO

R9G21211CSOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 1200V

0

R9G21811ASOO

R9G21811ASOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 1800V

0

R5110210XXWA

R5110210XXWA

Powerex, Inc.

DIODE GEN PURP 200V 100A DO205AA

0

R9G21411ASOO

R9G21411ASOO

Powerex, Inc.

DIODE FAST REC R9G 1100A 1400V

0

RDS82580XX

RDS82580XX

Powerex, Inc.

DIODE GEN PURP 2.5KV 8000A

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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