Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N3168R

1N3168R

Powerex, Inc.

DIODE STUD MNT 240A 400V DO-9

0

1N3261

1N3261

Powerex, Inc.

DIODE GEN PURP 100V 160A DO205AB

0

R7204406XXOO

R7204406XXOO

Powerex, Inc.

DIODE GP 4.4KV 600A DO200AA R62

0

1N4587

1N4587

Powerex, Inc.

DIODE GEN PURP 100V 150A DO205AA

0

1N3276

1N3276

Powerex, Inc.

DIODE GEN PURP 1.6KV 160A DO205

0

A187B

A187B

Powerex, Inc.

DIODE GEN PURP 200V 150A DO205AA

0

RA202625XX

RA202625XX

Powerex, Inc.

DIODE GP 2.6KV 2500A POWRDISC

0

A187RM

A187RM

Powerex, Inc.

DIODE GEN PURP 600V 150A DO205AA

0

R9G03412XX

R9G03412XX

Powerex, Inc.

DIODE GP 3.4KV 1200A DO200AA R62

0

R6011430XXYA

R6011430XXYA

Powerex, Inc.

DIODE GEN PURP 1.4KV 300A DO205

0

A330N

A330N

Powerex, Inc.

DIODE GEN PURP 800V 1200A DO200

0

R7001004XXUA

R7001004XXUA

Powerex, Inc.

DIODE GEN PURP 1KV 450A DO200

0

A197PB

A197PB

Powerex, Inc.

DIODE GEN PURP 1.2KV 250A DO205

0

A180D

A180D

Powerex, Inc.

DIODE GEN PURP 400V 150A DO205AA

0

R6010225XXYA

R6010225XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT REVERSE DO-

0

A399D

A399D

Powerex, Inc.

DIODE FAST 400A 400V DO-200AA

0

R6221240HSOO

R6221240HSOO

Powerex, Inc.

DIODE GP 1.2KV 400A DO200AA R62

0

A177B

A177B

Powerex, Inc.

DIODE GEN PURP 200V 100A DO205AA

0

RA203820XX

RA203820XX

Powerex, Inc.

DIODE GP 3.8KV 2000A POWRDISC

0

R6002425XXYA

R6002425XXYA

Powerex, Inc.

DIODE GEN PURP 2.4KV 250A DO205

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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