Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R5001415XXZT

R5001415XXZT

Powerex, Inc.

RECTIFIER 1400V 150A DO-8 FOR

93

R6221640ESOO

R6221640ESOO

Powerex, Inc.

DIODE GEN PURP 1.6KV 400A DO200

0

1N3288AR

1N3288AR

Powerex, Inc.

DIODE GEN PURP 100V 100A DO205AA

0

R5031018FSWA

R5031018FSWA

Powerex, Inc.

DIODE GEN PURP 1KV 175A DO205

0

1N4046

1N4046

Powerex, Inc.

DIODE GEN PURP 150V 275A DO205AB

0

1N4047

1N4047

Powerex, Inc.

DIODE GEN PURP 200V 275A DO205AB

0

1N3262R

1N3262R

Powerex, Inc.

DIODE GEN PURP 150V 160A DO205AB

0

R5030610RSWA

R5030610RSWA

Powerex, Inc.

DIODE GEN PURP 600V 100A DO205AA

0

1N3736

1N3736

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

A430P

A430P

Powerex, Inc.

DIODE GEN PURP 1KV 1000A DO200AB

0

R6011030XXYA

R6011030XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT REVERSE DO-

0

1N4053

1N4053

Powerex, Inc.

DIODE GEN PURP 700V 275A DO205AB

0

R7202206XXOO

R7202206XXOO

Powerex, Inc.

DIODE GP 2.2KV 600A DO200AB

0

R6011425XXYA

R6011425XXYA

Powerex, Inc.

DIODE GEN PURP 1.4KV 250A DO205

0

R9G01818XX

R9G01818XX

Powerex, Inc.

DIODE GP 1.8KV 1800A DO200AB

0

1N3738

1N3738

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

A390M

A390M

Powerex, Inc.

DIODE GP 600V 400A DO200AA R62

0

A330PD

A330PD

Powerex, Inc.

DIODE GEN PURP 1.4KV 1200A DO200

0

A190N

A190N

Powerex, Inc.

DIODE GEN PURP 800V 250A DO205AA

0

A197RPE

A197RPE

Powerex, Inc.

DIODE GEN PURP REV 1.5KV DO205AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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