Diodes - Rectifiers

Diodes - Rectifiers - Arrays

Part Number	Description / PDF	Quantity
NTE6086 NTE Electronics, Inc.	R-SCHOTTKY 100V 20A	92
NTE528 NTE Electronics, Inc.	R-5 STEP TRIPLER	4
NTE6222 NTE Electronics, Inc.	RECT-MODULE 1600V 60A	101
NTE6200 NTE Electronics, Inc.	R-200V 30AMP CATH CASE	12
NTE644 NTE Electronics, Inc.	R-DUAL CMN ANODE 400V 16A	698
NTE595 NTE Electronics, Inc.	D-SI DUAL COMMON CATHODE	1012
NTE6234 NTE Electronics, Inc.	RECT-MODULE 1600V 195AMPS	92
NTE590 NTE Electronics, Inc.	DIODE ARRAY GP 100MA 3SIP	161
NTE6208 NTE Electronics, Inc.	R-400V 30A FAST REC CATH	16
NTE534 NTE Electronics, Inc.	R-TRIPLER SI TV HIV	0
NTE6085 NTE Electronics, Inc.	R-DUAL SCHOTTKY 16A 45V	1518
NTE6238 NTE Electronics, Inc.	RECT-MODULE 1600V 320 AMP	8
NTE643 NTE Electronics, Inc.	R-DUAL SCHOTTKY 10A 200V	1507
NTE178MP NTE Electronics, Inc.	D-SI-AFC AFT 50PRV	456
NTE629 NTE Electronics, Inc.	R-SI DUAL 200V 16A 150NS	434
NTE630 NTE Electronics, Inc.	R-SI DUAL 600V 16A 250NS	243
NTE632 NTE Electronics, Inc.	D-DUAL HI-SPEED SMT 4NS	1234
NTE6202 NTE Electronics, Inc.	R-400V 30AMP CATH CASE	15
NTE6236 NTE Electronics, Inc.	RECT-MODULE 1600V 250 AMP	1
NTE532 NTE Electronics, Inc.	R-TRIPLER SI TV HIV	13

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Double Diode Arrays	Two independent diodes in a shared package, common cathode/anode configuration	Full-bridge rectifiers in SMPS
Quad Diode Arrays	Four diodes arranged as dual series/parallel circuits	Three-phase rectification in industrial equipment
High-Voltage Arrays	Rated above 600V with enhanced dielectric isolation	Power factor correction circuits
Low-Voltage Schottky Arrays	30V with low forward voltage drop (0.15-0.45V)	DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

TO-220/TO-247 for high-power applications
SOIC/SOT-23 for surface-mount designs
Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

Parameter	Description	Importance
Max Repetitive Reverse Voltage (V_RRM)	600V-1600V ratings determine circuit insulation level	Ensures safe operation under voltage spikes
Forward Current (I_F(AV))	1A-50A average current handling capacity	Dictates power delivery capability
Forward Voltage Drop (V_F)	0.55V-1.1V (Si), 0.15V-0.45V (Schottky)	Impacts conduction losses and efficiency
Operating Junction Temperature (T_J)	-55 C to 175 C	Determines thermal stability
Reverse Recovery Time (t_rr)	10ns-2 s	Affects switching performance

5. Application Areas

Power Supplies: Switch-mode power supplies (SMPS), battery chargers
Automotive: Alternator rectification, onboard chargers
Industrial: Motor drives, welding inverters
Renewables: Solar micro-inverters, wind turbine converters
Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MUR420	200V, 4A, 35ns recovery time
STMicroelectronics	STTH1R06A	600V, 1A, 50ns
Infineon Technologies	IDW40G65H5	650V, 40A, SiC Schottky
Diodes Inc.	B550-13-F	50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

Calculate required V_RRM with 20% safety margin
Verify I_F(AV) against RMS current values
Select package based on thermal dissipation needs
Consider SiC/GaN alternatives for high-frequency designs
Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
Miniaturization through chip-scale packaging
Integrated protection features (TVS + rectifier arrays)
Automotive-grade devices for 800V EV systems
AI-driven failure prediction models in manufacturing