Diodes - Rectifiers

Diodes - Rectifiers - Arrays

Part Number	Description / PDF	Quantity
NTE6240 NTE Electronics, Inc.	R-DUAL SI 200V 16A	963
NTE110MP NTE Electronics, Inc.	D-GE-MATCHED PAIR	456
NTE6232 NTE Electronics, Inc.	RECT-MODULE 1600V 100 AMP	40
NTE6088 NTE Electronics, Inc.	R-SCHOTTKY 30A 60V DUAL	1001
NTE6218 NTE Electronics, Inc.	RECTIFIER MOD 600V 200A	10
NTE623 NTE Electronics, Inc.	R-SI DUAL 200V 6A 150NS	286
NTE531 NTE Electronics, Inc.	R-TRIPLER SI TV HIV	1
NTE6252 NTE Electronics, Inc.	R-SI 600V 30A DUAL FAST	42
NTE6244 NTE Electronics, Inc.	R-SI DUAL200PRV 16A	164
NTE6206 NTE Electronics, Inc.	R-200V 30A FAST REC CATH	4
NTE6241 NTE Electronics, Inc.	R-SI 600V 16A DUAL	28
NTE6090 NTE Electronics, Inc.	R-DUAL SCHOTTKY 45V 30A	430
NTE596 NTE Electronics, Inc.	D-SI DUAL COMMON ANODE	321
NTE6251 NTE Electronics, Inc.	R-SI 200V 30A DUAL FAST	266
NTE6220 NTE Electronics, Inc.	RECT-MODULE 1200V 60AMPS	17
NTE6093 NTE Electronics, Inc.	R-SI DUAL 60V 60A SCHOTKY	195
NTE627 NTE Electronics, Inc.	R-SI DUAL 200V 12A 150NS	1600
NTE533 NTE Electronics, Inc.	R-TRIPLER SI TV HIV	4
NTE6230 NTE Electronics, Inc.	SCR 1200V 90A MODULE	72
NTE645 NTE Electronics, Inc.	R-DUAL CMN ANODE 600V 16A	3999

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Double Diode Arrays	Two independent diodes in a shared package, common cathode/anode configuration	Full-bridge rectifiers in SMPS
Quad Diode Arrays	Four diodes arranged as dual series/parallel circuits	Three-phase rectification in industrial equipment
High-Voltage Arrays	Rated above 600V with enhanced dielectric isolation	Power factor correction circuits
Low-Voltage Schottky Arrays	30V with low forward voltage drop (0.15-0.45V)	DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

TO-220/TO-247 for high-power applications
SOIC/SOT-23 for surface-mount designs
Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

Parameter	Description	Importance
Max Repetitive Reverse Voltage (V_RRM)	600V-1600V ratings determine circuit insulation level	Ensures safe operation under voltage spikes
Forward Current (I_F(AV))	1A-50A average current handling capacity	Dictates power delivery capability
Forward Voltage Drop (V_F)	0.55V-1.1V (Si), 0.15V-0.45V (Schottky)	Impacts conduction losses and efficiency
Operating Junction Temperature (T_J)	-55 C to 175 C	Determines thermal stability
Reverse Recovery Time (t_rr)	10ns-2 s	Affects switching performance

5. Application Areas

Power Supplies: Switch-mode power supplies (SMPS), battery chargers
Automotive: Alternator rectification, onboard chargers
Industrial: Motor drives, welding inverters
Renewables: Solar micro-inverters, wind turbine converters
Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MUR420	200V, 4A, 35ns recovery time
STMicroelectronics	STTH1R06A	600V, 1A, 50ns
Infineon Technologies	IDW40G65H5	650V, 40A, SiC Schottky
Diodes Inc.	B550-13-F	50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

Calculate required V_RRM with 20% safety margin
Verify I_F(AV) against RMS current values
Select package based on thermal dissipation needs
Consider SiC/GaN alternatives for high-frequency designs
Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
Miniaturization through chip-scale packaging
Integrated protection features (TVS + rectifier arrays)
Automotive-grade devices for 800V EV systems
AI-driven failure prediction models in manufacturing