Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS4006E6327HTSA1

BAS4006E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT23

7887

BAV70UE6359HTMA1

BAV70UE6359HTMA1

IR (Infineon Technologies)

HIGH SPEED SWITCHING DIODE

230000

DD710N16KHPSA2

DD710N16KHPSA2

IR (Infineon Technologies)

DIODE MODULE GP 1600V 710A

0

BAW56UE6433HTMA1

BAW56UE6433HTMA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SC74-6

0

BAV70E6433HTMA1

BAV70E6433HTMA1

IR (Infineon Technologies)

GENERAL PURPOSE HIGH SPEED SWITC

30000

DD435N34KHPSA1

DD435N34KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 3400V 573A

2

BAV70SH6827XTSA1

BAV70SH6827XTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT363

0

BAS70-07WE6327

BAS70-07WE6327

IR (Infineon Technologies)

SCHOTTKY DIODE

4750

BAT6404E6327

BAT6404E6327

IR (Infineon Technologies)

RECTIFIER DIODE, SCHOTTKY

2800

DD98N22KHPSA1

DD98N22KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 2200V 98A

0

DDB6U205N16LHOSA1

DDB6U205N16LHOSA1

IR (Infineon Technologies)

DIODE MODULE GP 1600V

2

BAV70E6433

BAV70E6433

IR (Infineon Technologies)

HIGH SPEED SWITCHING DIODE

420000

BAT6406E6327HTSA1

BAT6406E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT23

12802

EDD480N22P60HPSA1

EDD480N22P60HPSA1

IR (Infineon Technologies)

THYR / DIODE MODULE DK

0

BAS70-5

BAS70-5

IR (Infineon Technologies)

SCHOTTKY DIODE

88700

DD800S17K3_B2

DD800S17K3_B2

IR (Infineon Technologies)

DIODE MODULE GP 1700V 800A

0

EDD630N16P60HPSA1

EDD630N16P60HPSA1

IR (Infineon Technologies)

THYR / DIODE MODULE DK

0

DD89N14KHPSA1

DD89N14KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 1400V 89A

12

BAS28

BAS28

IR (Infineon Technologies)

SWITCHING DIODE ARRAY

0

DD89N16KAHPSA1

DD89N16KAHPSA1

IR (Infineon Technologies)

DIODE ARRAY MOD 1200V 140A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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