Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAV 70W H6327

BAV 70W H6327

IR (Infineon Technologies)

HIGH SPEED SWITCHING DIODE

78000

BAS7006E6433HTMA1

BAS7006E6433HTMA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 70V SOT23

29980

BAV70WE6327

BAV70WE6327

IR (Infineon Technologies)

HIGH SPEED SWITCHING DIODE

8000

BAV170E6359HTMA1

BAV170E6359HTMA1

IR (Infineon Technologies)

RECTIFIER DIODE, 2 ELEMENT, 0.2A

170000

BAT240AE6327HTSA1

BAT240AE6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 240V SOT23

12252

DD175N34KHPSA1

DD175N34KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 3400V 223A

1

DD435N36KHPSA1

DD435N36KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 3600V 573A

0

BAS4004E6327HTSA1

BAS4004E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT23

26896

BAS7005E6327

BAS7005E6327

IR (Infineon Technologies)

SCHOTTKY DIODE

9000

DD175N30KHPSA1

DD175N30KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 3000V 223A

0

BAS7004WH6327XTSA1

BAS7004WH6327XTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 70V SOT323

65116

BAT6404WH6327XTSA1

BAT6404WH6327XTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT323

24631

BAS4005E6433HTMA1

BAS4005E6433HTMA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT23

19916

DD540N22KTIMHPSA1

DD540N22KTIMHPSA1

IR (Infineon Technologies)

THYR / DIODE MODULE DK

0

BAV74

BAV74

IR (Infineon Technologies)

RECTIFIER DIODE

66000

BAS4007WH6327

BAS4007WH6327

IR (Infineon Technologies)

SCHOTTKY DIODE

6000

BAW156E6327HTSA1

BAW156E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT23

33214

BAT54-05WH6327

BAT54-05WH6327

IR (Infineon Technologies)

SCHOTTKY DIODE

30000

DD800S17H4B2BOSA2

DD800S17H4B2BOSA2

IR (Infineon Technologies)

DIODE MODUL GP 1700V AGIHMB130-1

0

DD1200S45KL3B5NOSA1

DD1200S45KL3B5NOSA1

IR (Infineon Technologies)

DIODE MODULE 1200V 1200A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top