Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
1SS181,LF

1SS181,LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA SC59

0

1SS402TE85LF

1SS402TE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 20V USQ

2708

1SS361CT(TPL3)

1SS361CT(TPL3)

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA CST3

512

1SS302A,LF

1SS302A,LF

Toshiba Electronic Devices and Storage Corporation

DIODE SW 80V 100MA USM SC70

0

1SS184,LF

1SS184,LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA SC59

3130

HN2D01FTE85LF

HN2D01FTE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 80MA SC74

2838

HN1D01FE(TE85L,F)

HN1D01FE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA ES6

9259

1SS392,LF

1SS392,LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 40V SC59

1537

TBAT54A,LM

TBAT54A,LM

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 100MA SOT23

601

1SS360,LJ(CT

1SS360,LJ(CT

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA SC75

4894

HN2S01FUTE85LF

HN2S01FUTE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 10V US6

1448

CVJ10F30,LF

CVJ10F30,LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 30V 1A UFV

2795

TBAT54C,LM

TBAT54C,LM

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 140MA SOT23

8844

1SS382TE85LF

1SS382TE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA USQ

5985

1SS374(TE85L,F)

1SS374(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 10V SC59

1250

HN2S02JE(TE85L,F)

HN2S02JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 40V ESV

1477

1SS423(TE85L,F)

1SS423(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 40V SSM

127

1SS362FV,L3F

1SS362FV,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA VESM

0

BAV99,LM

BAV99,LM

Toshiba Electronic Devices and Storage Corporation

X34 PB-F SWITCHING DIODE SOT23

0

BAV70,LM

BAV70,LM

Toshiba Electronic Devices and Storage Corporation

X34 PB-F SWITCHING DIODE SOT23

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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