Diodes - Rectifiers

Diodes - Rectifiers - Arrays

Part Number	Description / PDF	Quantity
TRS24N65FB,S1Q Toshiba Electronic Devices and Storage Corporation	SIC SBD TO-247 V=650 IF=12A	240
HN2S02FU(TE85L,F) Toshiba Electronic Devices and Storage Corporation	SMALL-SIGNAL SCHOTTKY BARRIER DI	5376
1SS384TE85LF Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY SCHOTTKY 10V USQ	20077
1SS309(TE85L,F) Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 100MA SMV	23061
HN1D02F(TE85L,F) Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 100MA SM6	559
1SS362TE85LF Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 80MA SSM	8081
HN4D01JU(TE85L,F) Toshiba Electronic Devices and Storage Corporation	COMMON ANODE SWITCHING DIODE 80V	5998
1SS300,LF Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 100MA USM	1745
HN1D02FU(T5L,F,T) Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 100MA US6	2852
1SS398TE85LF Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 400V 100MA SMINI	0
1SS383(TE85L,F) Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY SCHOTTKY 40V USQ	8078
1SS319(TE85L,F) Toshiba Electronic Devices and Storage Corporation	DIODE SCHOTKY GP 40V 100MA SC61B	9224
HN1D02FU,LF Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 100MA US6	8731
TBAV99,LM Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 100MA SOT23-3	3771
TRS20N65FB,S1Q Toshiba Electronic Devices and Storage Corporation	SIC SBD TO-247 V=650 IF=12A	227
1SS396,LF Toshiba Electronic Devices and Storage Corporation	DIODE SCHOTKY 40V 70MA SMINI	2916
1SS226,LF Toshiba Electronic Devices and Storage Corporation	PB-F S-MINI M8 DIODE (LF), IFM=3	0
HN1D01F(TE85L,F) Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 80V 100MA SM6	2590
HN2D02FU,LF Toshiba Electronic Devices and Storage Corporation	INDEPENDENT SWITCHING DIODE 80V	11890
1SS306TE85LF Toshiba Electronic Devices and Storage Corporation	DIODE ARRAY GP 200V 100MA SC61B	0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Double Diode Arrays	Two independent diodes in a shared package, common cathode/anode configuration	Full-bridge rectifiers in SMPS
Quad Diode Arrays	Four diodes arranged as dual series/parallel circuits	Three-phase rectification in industrial equipment
High-Voltage Arrays	Rated above 600V with enhanced dielectric isolation	Power factor correction circuits
Low-Voltage Schottky Arrays	30V with low forward voltage drop (0.15-0.45V)	DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

TO-220/TO-247 for high-power applications
SOIC/SOT-23 for surface-mount designs
Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

Parameter	Description	Importance
Max Repetitive Reverse Voltage (V_RRM)	600V-1600V ratings determine circuit insulation level	Ensures safe operation under voltage spikes
Forward Current (I_F(AV))	1A-50A average current handling capacity	Dictates power delivery capability
Forward Voltage Drop (V_F)	0.55V-1.1V (Si), 0.15V-0.45V (Schottky)	Impacts conduction losses and efficiency
Operating Junction Temperature (T_J)	-55 C to 175 C	Determines thermal stability
Reverse Recovery Time (t_rr)	10ns-2 s	Affects switching performance

5. Application Areas

Power Supplies: Switch-mode power supplies (SMPS), battery chargers
Automotive: Alternator rectification, onboard chargers
Industrial: Motor drives, welding inverters
Renewables: Solar micro-inverters, wind turbine converters
Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MUR420	200V, 4A, 35ns recovery time
STMicroelectronics	STTH1R06A	600V, 1A, 50ns
Infineon Technologies	IDW40G65H5	650V, 40A, SiC Schottky
Diodes Inc.	B550-13-F	50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

Calculate required V_RRM with 20% safety margin
Verify I_F(AV) against RMS current values
Select package based on thermal dissipation needs
Consider SiC/GaN alternatives for high-frequency designs
Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
Miniaturization through chip-scale packaging
Integrated protection features (TVS + rectifier arrays)
Automotive-grade devices for 800V EV systems
AI-driven failure prediction models in manufacturing