Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STPS40150CG-TR

STPS40150CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V D2PAK

155

STPS41H100CGY-TR

STPS41H100CGY-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V D2PAK

5188

STPS30L30CR

STPS30L30CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V I2PAK

0

STTH16L06CFP

STTH16L06CFP

STMicroelectronics

DIODE ARRAY GP 600V 8A TO220FP

336

STTH30AC06CPF

STTH30AC06CPF

STMicroelectronics

DIODE ARRAY GP 600V 15A TO3PF

0

STTH602CT

STTH602CT

STMicroelectronics

DIODE ARRAY GP 200V 3A TO220AB

2000

STPS40170CW

STPS40170CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V TO247

33

STPS20L25CT

STPS20L25CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 25V TO220AB

977

STPS40H100CW

STPS40H100CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V TO247

577

STTH2002CG

STTH2002CG

STMicroelectronics

DIODE ARRAY GP 200V 15A D2PAK

706

STPSC40H12CWL

STPSC40H12CWL

STMicroelectronics

DIODE ARRAY SCHOTTKY 1200V TO247

524

FERD60M45CT

FERD60M45CT

STMicroelectronics

DIODE ARRAY 45V 30A TO220AB

943

STPS20100CT

STPS20100CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V TO220

27

STPS2045CT

STPS2045CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO220AB

2023

STTH10002TV2

STTH10002TV2

STMicroelectronics

DIODE MODULE 200V 50A ISOTOP

11

STPSC31H12CWY

STPSC31H12CWY

STMicroelectronics

2X15A 1200V POWER SCHOTTKY SILIC

0

STTH12003TV1

STTH12003TV1

STMicroelectronics

DIODE MODULE 300V 60A ISOTOP

49

STTH120R04TV1

STTH120R04TV1

STMicroelectronics

DIODE MODULE 400V 60A ISOTOP

44

STTH200R04TV1

STTH200R04TV1

STMicroelectronics

DIODE MODULE 400V 100A ISOTOP

62

STTH1002CBY-TR

STTH1002CBY-TR

STMicroelectronics

DIODE ARRAY GP 200V 8A DPAK

47

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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