Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STTH1002CFP

STTH1002CFP

STMicroelectronics

DIODE ARRAY GP 200V 8A TO220FP

1700

STPS20H100CT

STPS20H100CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V TO220

9092

FERD20H60CTS

FERD20H60CTS

STMicroelectronics

DIODE ARRAY 60V 10A TO220AB

1982

FERD30M45CG-TR

FERD30M45CG-TR

STMicroelectronics

DIODE ARRAY 45V 15A D2PAK

0

STPS30150CG-TR

STPS30150CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V D2PAK

637

STPS200170TV1

STPS200170TV1

STMicroelectronics

DIODE MODULE 170V 100A ISOTOP

1190

BAT54AWFILM

BAT54AWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V SOT323

5336

STTH12012TV1

STTH12012TV1

STMicroelectronics

DIODE MODULE 1.2KV 60A ISOTOP

536

FERD30L60CTS

FERD30L60CTS

STMicroelectronics

DIODE ARRAY 60V 15A TO220AB

48

STPS120L15TV

STPS120L15TV

STMicroelectronics

DIODE MODULE 15V 60A ISOTOP

918

STPS60150CT

STPS60150CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V TO220

1388

STTH6006TV1

STTH6006TV1

STMicroelectronics

DIODE MODULE 600V 30A ISOTOP

49

STPS15H100CB-TR

STPS15H100CB-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V DPAK

2255

STTH30R03CW

STTH30R03CW

STMicroelectronics

DIODE ARRAY GP 300V 15A TO247-3

0

FERD30H60CTS

FERD30H60CTS

STMicroelectronics

DIODE ARRAY 60V 15A TO220AB

1980

STPS61L60CT

STPS61L60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

1970

STTH10LCD06CT

STTH10LCD06CT

STMicroelectronics

DIODE ARRAY GP 600V 5A TO220AB

0

STPS10170CT

STPS10170CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V TO220

0

STPS640CB

STPS640CB

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V 3A DPAK

2011

BAS70-05WFILM

BAS70-05WFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 70V SOT323

6205

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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