Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
84CNQ060SL

84CNQ060SL

SMC Diode Solutions

DIODE SCHOTTKY 60V 40A PRM2-SL

0

MBRF4045CT

MBRF4045CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 30V ITO220

1000

STF4045C

STF4045C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V ITO220

1000

MBRB2545CTTR

MBRB2545CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V D2PAK

530

30CPQ150

30CPQ150

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V TO247

2111

MBR4080CT

MBR4080CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 80V TO220AB

809

32CTQ030

32CTQ030

SMC Diode Solutions

30A, 30V, TO-220AB, SCHOTTKY REC

0

40CPQ040

40CPQ040

SMC Diode Solutions

40A, 40V, TO-247AD, SCHOTTKY REC

300

30CTQ050STR

30CTQ050STR

SMC Diode Solutions

DIODE SCHOTTKY 50V 15A D2PAK

0

169CMQ135

169CMQ135

SMC Diode Solutions

DIODE SCHOTTKY 135V 80A TO249AA

0

ST40120C

ST40120C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 120V TO220

1000

84CNQ035SL

84CNQ035SL

SMC Diode Solutions

DIODE SCHOTTKY 35V 40A PRM2-SL

0

401CNQ040

401CNQ040

SMC Diode Solutions

DIODE SCHOTTKY 40V 200A PRM4

0

12CWQ04FNTR

12CWQ04FNTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 40V DPAK

32068

MBRF30200CTR

MBRF30200CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V ITO220

827

84CNQ060SM

84CNQ060SM

SMC Diode Solutions

DIODE SCHOTTKY 60V 40A PRM2-SM

0

ST3060C

ST3060C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V TO220AB

1000

ST30150C

ST30150C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V TO220

1000

MBR1045CTP

MBR1045CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO220AB

812

MBRF30100CTP

MBRF30100CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V ITO220

1660

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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