Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STF3060C

STF3060C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V ITO220

1000

84CNQ060

84CNQ060

SMC Diode Solutions

DIODE SCHOTTKY 60V 40A PRM2

0

MBRF3060CTP

MBRF3060CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V ITO220

1000

MBR20200CT

MBR20200CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V TO220

8615

MBR30100WT

MBR30100WT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V TO247

5

89CNQ150SM

89CNQ150SM

SMC Diode Solutions

DIODE SCHOTTKY 150V 40A PRM2-SM

0

STB40100CTR

STB40100CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V D2PAK

800

81CNQ040SL

81CNQ040SL

SMC Diode Solutions

DIODE SCHOTTKY 40V 40A PRM2-SL

0

225CNQ015

225CNQ015

SMC Diode Solutions

DIODE SCHOTTKY 15V 110A PRM4

0

MBRB20200CTTR

MBRB20200CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V D2PAK

133

BAT54CWTR

BAT54CWTR

SMC Diode Solutions

DIODE SCHOTTKY 30V 100MA SOT323

0

66CNQ200

66CNQ200

SMC Diode Solutions

DIODE SCHOTTKY 200V 30A PRM3

0

MBR30100CTP

MBR30100CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V TO220

10

SDUR2020WT

SDUR2020WT

SMC Diode Solutions

DIODE ARRAY GP 200V TO247AD

300

MBRD10200CTTR

MBRD10200CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V DPAK

1816

63CNQ080

63CNQ080

SMC Diode Solutions

DIODE SCHOTTKY 80V 30A PRM3

0

25CTQ045

25CTQ045

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO220AB

7100

ST4045C

ST4045C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO220AB

800

STB30100CTR

STB30100CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V D2PAK

800

SDURB1060CTTR

SDURB1060CTTR

SMC Diode Solutions

DIODE ARRAY GEN PURP 600V D2PAK

800

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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