Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
220CNQ025

220CNQ025

SMC Diode Solutions

DIODE SCHOTTKY 25V 110A PRM4

0

SBR3045CT

SBR3045CT

SMC Diode Solutions

DIODE SCHOTTKY 45V TO220AB

0

60CNQ045SM

60CNQ045SM

SMC Diode Solutions

DIODE SCHOTTKY 45V 30A PRM3-SM

0

MBRF20150CTL

MBRF20150CTL

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V ITO220

17

SBRF30150CT

SBRF30150CT

SMC Diode Solutions

DIODE SCHOTTKY 150V ITO220AB

0

MBRF3040CT

MBRF3040CT

SMC Diode Solutions

DIODE SCHOTTKY 40V ITO220AB

0

224CNQ035

224CNQ035

SMC Diode Solutions

DIODE SCHOTTKY 35V 110A PRM4

0

301CNQ040

301CNQ040

SMC Diode Solutions

DIODE SCHOTTKY 40V 150A PRM4

0

SBR1045CT

SBR1045CT

SMC Diode Solutions

DIODE SCHOTTKY 45V TO220AB

0

15CTQ045

15CTQ045

SMC Diode Solutions

15A, 45V, TO-220AB, SCHOTTKY REC

909

301CMQ045

301CMQ045

SMC Diode Solutions

DIODE SCHOTTKY 45V 150A PRM4

0

STB4045CTR

STB4045CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V D2PAK

636

MBRF10200CT

MBRF10200CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V ITO220

6838

MBRB2530CTTR

MBRB2530CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 30V D2PAK

800

STF2060C

STF2060C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V ITO220

994

STB2045CTR

STB2045CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V D2PAK

1680

MBR2060CT

MBR2060CT

SMC Diode Solutions

RECTIFIER DIODE

8469

25CTQ035STR

25CTQ035STR

SMC Diode Solutions

25A, 35V, D2PAK, SCHOTTKY RECTIF

1114

STD2045CTR

STD2045CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V DPAK

186

30CPQ045

30CPQ045

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO247AD

218

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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