Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
84CNQ060S2

84CNQ060S2

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V PRM2

0

SB2540DCTR

SB2540DCTR

SMC Diode Solutions

DIODE SCHOTTKY 40V 25A D2PAK

0

STB10100CTR

STB10100CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V D2PAK

798

81CNQ040

81CNQ040

SMC Diode Solutions

DIODE SCHOTTKY 40V 40A PRM2

0

MBR30150CT

MBR30150CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V TO220

1593

409DMQ135

409DMQ135

SMC Diode Solutions

DIODE SCHOTTKY 135V 200A PRM4

0

160CMQ035

160CMQ035

SMC Diode Solutions

DIODE SCHOTTKY 35V 80A TO249AA

0

MBRD20150CTTR

MBRD20150CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V DPAK

3449

STF3045C

STF3045C

SMC Diode Solutions

DIODE SCHOTTKY 45V ITO220AB

996

STF20120CR

STF20120CR

SMC Diode Solutions

DIODE SCHOTTKY 120V ITO220AB

754

83CNQ080SM

83CNQ080SM

SMC Diode Solutions

DIODE SCHOTTKY 80V 40A PRM2-SM

0

ST30200C

ST30200C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V TO220

993

60CNQ035SM

60CNQ035SM

SMC Diode Solutions

DIODE SCHOTTKY 35V 30A PRM3-SM

0

MBR90200WT

MBR90200WT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V TO247

7

MBRF40100CTR

MBRF40100CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V ITO220

979

12CTQ040

12CTQ040

SMC Diode Solutions

12A, 40V, TO-220AB,SCHOTTKY RECT

1000

MBR2090CT

MBR2090CT

SMC Diode Solutions

DIODE SCHOTTKY 90V 10A

129317

STB2060CTR

STB2060CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V D2PAK

775

80CNQ045SM

80CNQ045SM

SMC Diode Solutions

DIODE SCHOTTKY 45V 40A PRM2-SM

0

301CMQ035

301CMQ035

SMC Diode Solutions

DIODE SCHOTTKY 35V 150A PRM4

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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