Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
400CNQ035

400CNQ035

SMC Diode Solutions

DIODE SCHOTTKY 35V 200A PRM4

0

SDURF3020CTR

SDURF3020CTR

SMC Diode Solutions

DIODE GEN PURP 200V 15A ITO220AB

6462

MBR3060CTP

MBR3060CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V TO220AB

33

SDURB3030CTTR

SDURB3030CTTR

SMC Diode Solutions

DIODE GEN PURP 300V 15A D2PAK

0

MBR40100WT

MBR40100WT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V TO247

189

BAT54A

BAT54A

SMC Diode Solutions

RECTIFIER DIODE

0

MBR3045CT

MBR3045CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO220AB

2853

MBRF3045CTP

MBRF3045CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V ITO220

935

400CNQ040

400CNQ040

SMC Diode Solutions

DIODE SCHOTTKY 40V 200A PRM4

0

12CTQ045

12CTQ045

SMC Diode Solutions

12A, 45V, TO-220AB,SCHOTTKY RECT

999

STF10100C

STF10100C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V ITO220

1000

85CNQ015S2

85CNQ015S2

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 15V PRM2

1056

309CMQ135

309CMQ135

SMC Diode Solutions

DIODE SCHOTTKY 135V 150A PRM4

0

40CPQ060

40CPQ060

SMC Diode Solutions

40A, 60V, TO-247AD, SCHOTTKY REC

247

SBRF10200CT

SBRF10200CT

SMC Diode Solutions

DIODE SCHOTTKY 200V ITO220AB

0

SDUR3040WT

SDUR3040WT

SMC Diode Solutions

DIODE GEN PURP 400V 15A TO247AD

2982

6CWQ03FNTR

6CWQ03FNTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 30V DPAK

360

69CNQ135

69CNQ135

SMC Diode Solutions

DIODE SCHOTTKY 135V 30A PRM3

0

83CNQ100SL

83CNQ100SL

SMC Diode Solutions

DIODE SCHOTTKY 100V 40A PRM2-SL

0

SDURF2040CTR

SDURF2040CTR

SMC Diode Solutions

DIODE ARRAY GP 400V ITO220AB

362

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top