Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
66CNQ200SM

66CNQ200SM

SMC Diode Solutions

DIODE SCHOTTKY 200V 30A PRM3-SM

0

SDUR3020CT

SDUR3020CT

SMC Diode Solutions

DIODE GEN PURP 200V 15A TO220AB

0

SDURB2020CTTR

SDURB2020CTTR

SMC Diode Solutions

DIODE ARRAY GEN PURP 200V D2PAK

640

MBR10150CT

MBR10150CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V TO220

0

303CMQ100

303CMQ100

SMC Diode Solutions

DIODE SCHOTTKY 100V 150A PRM4

0

MBRF20100CTR

MBRF20100CTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V ITO220

883

63CNQ100

63CNQ100

SMC Diode Solutions

DIODE SCHOTTKY 100V 30A PRM3

46

STB15100CTR

STB15100CTR

SMC Diode Solutions

DIODE SCHOTTKY 100V D2PAK

0

MBRB10150CTTR

MBRB10150CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V D2PAK

774

303CNQ080

303CNQ080

SMC Diode Solutions

DIODE SCHOTTKY 80V 150A PRM4

0

SDUR1640CT

SDUR1640CT

SMC Diode Solutions

DIODE ARRAY GP 400V TO220AB

173

STF40120C

STF40120C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 120V ITO220

994

30CTQ045

30CTQ045

SMC Diode Solutions

30A, 45V, TO-220AB,SCHOTTKY RECT

665

61CNQ045SM

61CNQ045SM

SMC Diode Solutions

DIODE SCHOTTKY 45V 30A PRM3-SM

0

BAT54ATR

BAT54ATR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 30V SOT23

1743

201CNQ035

201CNQ035

SMC Diode Solutions

DIODE SCHOTTKY 35V 100A PRM4

0

STD5100CTR

STD5100CTR

SMC Diode Solutions

DIODE SCHOTTKY 100V DPAK

0

ST40100C

ST40100C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V TO220

992

150CMQ045

150CMQ045

SMC Diode Solutions

150A, 45V, TO-249, POWER MODULES

24

85CNQ015SM

85CNQ015SM

SMC Diode Solutions

DIODE SCHOTTKY 15V 40A PRM2-SM

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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