Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
GHXS020A060S-D3

GHXS020A060S-D3

SemiQ

DIODE SBD SHOTT 600V 20A SOT227

12

GSXD120A010S1-D3

GSXD120A010S1-D3

SemiQ

DIODE SCHOTTKY 100V 120A SOT227

0

GSXD050A020S1-D3

GSXD050A020S1-D3

SemiQ

DIODE SCHOTTKY 200V 50A SOT227

181

GSXD050A004S1-D3

GSXD050A004S1-D3

SemiQ

DIODE SCHOTTKY 45V 50A SOT227

0

GSXD100A012S1-D3

GSXD100A012S1-D3

SemiQ

DIODE SCHOTTKY 120V 100A SOT227

0

GHXS060B120S-D3

GHXS060B120S-D3

SemiQ

MODULE SCHOTTKY 1200V 60A SOT227

89

GHXS010A060S-D3

GHXS010A060S-D3

SemiQ

DIODE SBD SCHOTT 600V 10A SOT227

70

GHXS050B065S-D3

GHXS050B065S-D3

SemiQ

SIC SBD PARALLEL POWER MODULE 65

20

GHXS050B120S-D3

GHXS050B120S-D3

SemiQ

SIC SBD PARALLEL POWER MODULE 12

10

GP2D030A120U

GP2D030A120U

SemiQ

DIODE SIC 1200V 50A TO24

0

GP2D024A065U

GP2D024A065U

SemiQ

DIODE SILICON CARBIDE

0

GP2D010A120U

GP2D010A120U

SemiQ

DIODE ARRAY SCHOTTKY 1200V TO247

0

GP2D040A120U

GP2D040A120U

SemiQ

DIODE ARRAY SCHOTTKY 1200V TO247

0

GP3D010A120U

GP3D010A120U

SemiQ

DIODE SILICON CARBIDE

0

GP2D020A065U

GP2D020A065U

SemiQ

DIODE ARRAY SCHOTTKY 650V TO247

0

GP2D060A120U

GP2D060A120U

SemiQ

DIODE ARRAY SCHOTTKY 1200V TO247

0

GP2D020A120U

GP2D020A120U

SemiQ

DIODE ARRAY SCHOTTKY 1200V TO247

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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