Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
GHXS100B120S-D3

GHXS100B120S-D3

SemiQ

SIC SBD PARALLEL POWER MODULE 12

9

GSXD160A012S1-D3

GSXD160A012S1-D3

SemiQ

DIODE SCHOTTKY 120V 160A SOT227

0

GHXS015A120S-D3

GHXS015A120S-D3

SemiQ

DIODE SCHOT SBD 1200V 15A SOT227

15

GSXD050A018S1-D3

GSXD050A018S1-D3

SemiQ

DIODE SCHOTTKY 180V 50A SOT227

86

GSXD080A006S1-D3

GSXD080A006S1-D3

SemiQ

DIODE SCHOTTKY 60V 80A SOT227

0

GHXS050A060S-D3

GHXS050A060S-D3

SemiQ

DIODE SCHOTT SBD 600V 50A SOT227

1

GSXD060A018S1-D3

GSXD060A018S1-D3

SemiQ

DIODE SCHOTTKY 180V 60A SOT227

0

GSXF030A040S1-D3

GSXF030A040S1-D3

SemiQ

DIODE FAST REC 400V 30A SOT227

0

GSXD060A008S1-D3

GSXD060A008S1-D3

SemiQ

DIODE SCHOTTKY 80V 60A SOT227

96

GSXD030A010S1-D3

GSXD030A010S1-D3

SemiQ

DIODE SCHOTTKY 100V 30A SOT227

0

GSXD050A012S1-D3

GSXD050A012S1-D3

SemiQ

DIODE SCHOTTKY 120V 50A SOT227

97

GSXF030A120S1-D3

GSXF030A120S1-D3

SemiQ

DIODE FAST REC 1200V 30A SOT227

0

GSXD060A015S1-D3

GSXD060A015S1-D3

SemiQ

DIODE SCHOTTKY 150V 60A SOT227

98

GSXF030A100S1-D3

GSXF030A100S1-D3

SemiQ

DIODE FAST REC 1000V 30A SOT227

42

GSXF120A040S1-D3

GSXF120A040S1-D3

SemiQ

DIODE FAST REC 400V 120A SOT227

0

GSXD100A008S1-D3

GSXD100A008S1-D3

SemiQ

DIODE SCHOTTKY 80V 100A SOT227

11

GSXD160A008S1-D3

GSXD160A008S1-D3

SemiQ

DIODE SCHOTTKY 80V 160A SOT227

18

GSXF100A060S1-D3

GSXF100A060S1-D3

SemiQ

DIODE FAST REC 600V 100A SOT227

0

GSXF120A100S1-D3

GSXF120A100S1-D3

SemiQ

DIODE FAST REC 1000V 120A SOT227

20

GP3D030A120U

GP3D030A120U

SemiQ

SIC SCHOTTKY DIODE 1200V TO247-3

60

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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