TVS - Thyristors

Image Part Number Description / PDF Quantity Rfq
LCDP1521

LCDP1521

STMicroelectronics

THYRISTOR 60A 8SOIC

0

TPA68RL

TPA68RL

STMicroelectronics

THYRISTOR 68V 150A DO204AC

0

THBT27011D

THBT27011D

STMicroelectronics

THYRISTOR 270V 30A 8SOIC

0

TPA180RL

TPA180RL

STMicroelectronics

THYRISTOR 180V 150A DO204AC

0

SMP100MC-360

SMP100MC-360

STMicroelectronics

THYRISTOR 360V 300A DO214AA

0

SSRP105B1RL

SSRP105B1RL

STMicroelectronics

THYRISTOR 120A 8SOIC

0

TLP200G-1

TLP200G-1

STMicroelectronics

THYRISTOR 100A TO262-3

0

THDT6511DRL

THDT6511DRL

STMicroelectronics

THYRISTOR 40A 8SOIC

0

TLP200G

TLP200G

STMicroelectronics

THYRISTOR 100A TO263-3

0

THBT20011DRL

THBT20011DRL

STMicroelectronics

THYRISTOR 180V 30A 8SOIC

0

STIL04-P5

STIL04-P5

STMicroelectronics

THYRISTOR PENTAWATT5 HV2

0

TPA270RL

TPA270RL

STMicroelectronics

THYRISTOR 270V 150A DO204AC

0

LCP02-150M

LCP02-150M

STMicroelectronics

THYRISTOR 250A POWERSO-10

0

TPA62

TPA62

STMicroelectronics

THYRISTOR 62V 150A DO204AC

0

CLP200M

CLP200M

STMicroelectronics

THYRISTOR POWERSO-10

0

CLP200M-TR

CLP200M-TR

STMicroelectronics

THYRISTOR POWERSO-10

0

LCP152DEERL

LCP152DEERL

STMicroelectronics

THYRISTOR 100A 6QFN

0

LCP02-150M-TR

LCP02-150M-TR

STMicroelectronics

THYRISTOR 250A POWERSO-10

0

STIL02-P5

STIL02-P5

STMicroelectronics

THYRISTOR PENTAWATT5 HV2

0

TVS - Thyristors

1. Overview

Transient Voltage Suppression (TVS) diodes and Thyristors are critical components in circuit protection systems. TVS diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by electrostatic discharge (ESD), inductive load switching, or lightning strikes. Thyristors, a family of semiconductor devices including Silicon-Controlled Rectifiers (SCRs) and Triacs, are used for high-power switching and overvoltage protection. Both technologies are essential in modern electronics, ensuring reliability in applications ranging from consumer devices to industrial machinery.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSProtects against single-polarity transientsPower supplies, DC circuits
Bidirectional TVSClamps positive/negative transients simultaneouslyAC lines, communication interfaces
Silicon-Controlled Rectifier (SCR)Latching behavior for overvoltage crowbar protectionPower converters, motor drives
TriacAC current control and bidirectional switchingLighting control, HVAC systems

3. Structure and Composition

TVS diodes typically use a heavily doped PN junction structure with a large cross-sectional area to absorb transient energy. They are encapsulated in plastic packages (e.g., DO-214) with two terminals. Thyristors feature a four-layer PNPN structure with three terminals (anode, cathode, gate). Advanced models incorporate passivation layers and metal-over-glass packaging for thermal stability. Both devices use semiconductor materials like silicon, with doping profiles optimized for specific breakdown voltages.

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage causing conductionMatches protection level to circuit requirements
Clamping Voltage (Vc)Voltage across device during conductionDetermines stress on protected components
Response TimeTime to transition from off to on stateCritical for protecting against fast transients
Surge Current Rating (Ipp)Maximum allowable transient currentEnsures survival under worst-case scenarios
Holding Current (Ih)Thyristor-specific: Maintains conduction stateAffects reset behavior in crowbar circuits

5. Application Fields

Key industries include:

  • Telecommunications: Ethernet transceivers, fiber optic modules
  • Industrial Automation: PLCs, motor drives
  • Consumer Electronics: Smartphones, power adapters
  • Automotive: CAN bus protection, alternator circuits
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
LittelfuseSM8S Series TVS8kV ESD protection, low leakage current
STMicroelectronicsSTRIP Series ThyristorsIntegrated protection for AC loads
VishayTPSMB Series Bidirectional TVSAEC-Q101 qualified for automotive use
ON SemiconductorNUD3160 SCRIntegrated gate drive for crowbar circuits

7. Selection Guidelines

Key considerations:

  1. Match breakdown voltage to system operating voltage (typically 10-15% higher)
  2. Ensure clamping voltage is below the maximum rating of protected ICs
  3. Select surge current capacity based on expected fault conditions
  4. For thyristors: Evaluate holding current vs. load characteristics
  5. Consider packaging (SMD vs. through-hole) for PCB integration

Example: For a 12V automotive circuit, a bidirectional TVS with 18V breakdown voltage and 40A surge rating would protect against load dump transients while surviving ISO 7637 test pulses.

8. Industry Trends

Emerging trends include:

  • Integration of TVS and EMI filtering in single packages
  • Wide bandgap materials (SiC/GaN) enabling higher temperature operation
  • Smart thyristors with integrated diagnostics for predictive maintenance
  • Miniaturization driven by 5G infrastructure and IoT device demands
  • Rail-to-rail protection architectures in high-speed data lines
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