TVS - Thyristors

Image Part Number Description / PDF Quantity Rfq
SMP50-62

SMP50-62

STMicroelectronics

THYRISTOR 62V 150A DO214AC

0

SMTPA320

SMTPA320

STMicroelectronics

THYRISTOR 320V 150A DO214AA

0

THBT15011DRL

THBT15011DRL

STMicroelectronics

THYRISTOR 150V 30A 8SOIC

0

TPA220

TPA220

STMicroelectronics

THYRISTOR 220V 150A DO204AC

0

TPA220RL

TPA220RL

STMicroelectronics

THYRISTOR 220V 150A DO204AC

0

SMP100MC-230

SMP100MC-230

STMicroelectronics

THYRISTOR 230V 300A DO214AA

0

TPA200RL

TPA200RL

STMicroelectronics

THYRISTOR 200V 150A DO204AC

0

SMP50-120

SMP50-120

STMicroelectronics

THYRISTOR 120V 150A DO214AC

0

TPA68

TPA68

STMicroelectronics

THYRISTOR 68V 150A DO204AC

0

TPA240RL

TPA240RL

STMicroelectronics

THYRISTOR 240V 150A DO204AC

0

LCP1521S

LCP1521S

STMicroelectronics

THYRISTOR 100A 8SOIC

0

SMP50-320

SMP50-320

STMicroelectronics

THYRISTOR 320V 150A DO214AC

0

TLP140G-1

TLP140G-1

STMicroelectronics

THYRISTOR 100A TO262-3

0

TPP25011RL

TPP25011RL

STMicroelectronics

THYRISTOR 30A 8SOIC

0

STIL08-T5

STIL08-T5

STMicroelectronics

THYRISTOR PENTAWATT5 T5

0

TPA100

TPA100

STMicroelectronics

THYRISTOR 100V 150A DO204AC

0

SMP100LC-320

SMP100LC-320

STMicroelectronics

THYRISTOR 320V 400A DO214AA

0

LCP12-150B1RL

LCP12-150B1RL

STMicroelectronics

THYRISTOR 45A 8SOIC

0

SSRP105B1

SSRP105B1

STMicroelectronics

THYRISTOR 120A 8SOIC

0

LCDP1511DRL

LCDP1511DRL

STMicroelectronics

THYRISTOR 15A 8SOIC

0

TVS - Thyristors

1. Overview

Transient Voltage Suppression (TVS) diodes and Thyristors are critical components in circuit protection systems. TVS diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by electrostatic discharge (ESD), inductive load switching, or lightning strikes. Thyristors, a family of semiconductor devices including Silicon-Controlled Rectifiers (SCRs) and Triacs, are used for high-power switching and overvoltage protection. Both technologies are essential in modern electronics, ensuring reliability in applications ranging from consumer devices to industrial machinery.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSProtects against single-polarity transientsPower supplies, DC circuits
Bidirectional TVSClamps positive/negative transients simultaneouslyAC lines, communication interfaces
Silicon-Controlled Rectifier (SCR)Latching behavior for overvoltage crowbar protectionPower converters, motor drives
TriacAC current control and bidirectional switchingLighting control, HVAC systems

3. Structure and Composition

TVS diodes typically use a heavily doped PN junction structure with a large cross-sectional area to absorb transient energy. They are encapsulated in plastic packages (e.g., DO-214) with two terminals. Thyristors feature a four-layer PNPN structure with three terminals (anode, cathode, gate). Advanced models incorporate passivation layers and metal-over-glass packaging for thermal stability. Both devices use semiconductor materials like silicon, with doping profiles optimized for specific breakdown voltages.

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage causing conductionMatches protection level to circuit requirements
Clamping Voltage (Vc)Voltage across device during conductionDetermines stress on protected components
Response TimeTime to transition from off to on stateCritical for protecting against fast transients
Surge Current Rating (Ipp)Maximum allowable transient currentEnsures survival under worst-case scenarios
Holding Current (Ih)Thyristor-specific: Maintains conduction stateAffects reset behavior in crowbar circuits

5. Application Fields

Key industries include:

  • Telecommunications: Ethernet transceivers, fiber optic modules
  • Industrial Automation: PLCs, motor drives
  • Consumer Electronics: Smartphones, power adapters
  • Automotive: CAN bus protection, alternator circuits
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
LittelfuseSM8S Series TVS8kV ESD protection, low leakage current
STMicroelectronicsSTRIP Series ThyristorsIntegrated protection for AC loads
VishayTPSMB Series Bidirectional TVSAEC-Q101 qualified for automotive use
ON SemiconductorNUD3160 SCRIntegrated gate drive for crowbar circuits

7. Selection Guidelines

Key considerations:

  1. Match breakdown voltage to system operating voltage (typically 10-15% higher)
  2. Ensure clamping voltage is below the maximum rating of protected ICs
  3. Select surge current capacity based on expected fault conditions
  4. For thyristors: Evaluate holding current vs. load characteristics
  5. Consider packaging (SMD vs. through-hole) for PCB integration

Example: For a 12V automotive circuit, a bidirectional TVS with 18V breakdown voltage and 40A surge rating would protect against load dump transients while surviving ISO 7637 test pulses.

8. Industry Trends

Emerging trends include:

  • Integration of TVS and EMI filtering in single packages
  • Wide bandgap materials (SiC/GaN) enabling higher temperature operation
  • Smart thyristors with integrated diagnostics for predictive maintenance
  • Miniaturization driven by 5G infrastructure and IoT device demands
  • Rail-to-rail protection architectures in high-speed data lines
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