TVS - Mixed Technology

Part Number	Description / PDF	Quantity
SN75240PWG4 Texas Instruments	SN75240 DUAL USB PORT TRANSIENT	822
SN75240PWR Texas Instruments	IC DUAL USB PORT TVS 8-TSSOP	4461
TPD2S701QDSKRQ1 Texas Instruments	TPD2S701-Q1 AUTOMOTIVE USB 2-CHA	2190
TPD2S703QDSKRQ1 Texas Instruments	TPD2S703-Q1 - AUTOMOTIVE USB 2-C	866
SN65240PWRG4 Texas Instruments	IC USB TRANSIENT SUPP 8-TSSOP	0
TPD13S523PWR Texas Instruments	TVS DIODE 5.5VWM 15VC 16TSSOP	3089
TPD7S019-15RSVR Texas Instruments	IC ESD SOLUTION 7CH 16UQFN	2495
TL7726CD Texas Instruments	IC HEX CLAMPING CIRCUIT 8-SOIC	746
TVS3301DRBR Texas Instruments	TVS ARRAYS	3179
TL7726QDG4 Texas Instruments	TL7726 HEX CLAMPING CIRCUIT	9925
TL7726QDR Texas Instruments	IC HEX CLAMPING CIRCUITS 8-SOIC	8465
TPD7S019-15DBQR Texas Instruments	IC ESD SOLUTION 7CH 16SSOP	6728
SN65220DBVRG4 Texas Instruments	IC USB TRANSIENT SUPP SOT23-6	213
TPD2S703QDGSRQ1 Texas Instruments	TVS MIXED TECHNOLOGY 6VC 10VSSOP	0
SN65240PWG4 Texas Instruments	IC USB TRANSIENT SUPP 8-TSSOP	0
SN65240P Texas Instruments	IC DUAL USB PORT TVS 8-DIP	500
TPD2S017DBVR Texas Instruments	IC ESD SOLUTION 2CH SOT23-6	990
TL7726CDE4 Texas Instruments	IC HEX CLAMPING CIRCUITS 8-SOIC	0
SN65240PG4 Texas Instruments	IC USB TRANSIENT SUPP 8-DIP	0
SN65220DBVR Texas Instruments	IC SINGLE USB PORT TVS SOT-23-6	92540

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials