TVS - Mixed Technology

Part Number	Description / PDF	Quantity
SN75240P Texas Instruments	IC DUAL USB PORT TVS 8-DIP	812
TCM1050DR Texas Instruments	TCM1050 DUAL TRANSIENT-VOLTAGE S	12500
SN75240PW Texas Instruments	IC DUAL USB PORT TVS 8-TSSOP	678
TPD2S701QDGSRQ1 Texas Instruments	TPD2S701-Q1 AUTOMOTIVE USB 2-CHA	34725
TL7726QD Texas Instruments	IC HEX CLAMPING CIRCUITS 8-SOIC	174
SN65220IDBVRQ1 Texas Instruments	VOLT SUP DIODE AUTO 7V SOT23-6	9000
SN65220DBVT Texas Instruments	IC SINGLE USB PORT TVS SOT-23-6	6407
TCM1050D Texas Instruments	TCM1050 DUAL TRANSIENT-VOLTAGE S	367
TL7726CDR Texas Instruments	IC HEX CLAMPING CIRCUIT 8-SOIC	954
TVS3300YZFR Texas Instruments	33V PRECISION SURGE PROTECTION C	6807
TL7726IDR Texas Instruments	IC HEX CLAMPING CIRCUITS 8-SOIC	9836
TL7726ID Texas Instruments	IC HEX CLAMPING CIRCUIT 8-SOIC	174
TL7726QDRG4 Texas Instruments	TL7726 HEX CLAMPING CIRCUIT	29351
SN65220DBVTG4 Texas Instruments	IC USB TRANSIENT SUPP SOT23-6	502
TL7726CP Texas Instruments	IC HEX CLAMPING CIRCUIT 8-DIP	142
TVS3300DRVR Texas Instruments	TVS MIXED TECHNOLOGY 40VC 6WSON	25115
SN75240PWRG4 Texas Instruments	IC DUAL USB PORT TVS 8-TSSOP	601
TL7726QP Texas Instruments	HEX CLAMPING CIRCUITS	1296
TL7726IP Texas Instruments	IC HEX CLAMPING CIRCUIT 8-DIP	590
TPD4S1394DQLR Texas Instruments	FIREWIRE ESD CLAMP WITH LIVE-INS	25749

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials