TVS - Mixed Technology

Part Number	Description / PDF	Quantity
DSLP0080T023G6RP Wickmann / Littelfuse	SIDACTOR G.FAST 8V 30A SOT23-6	0
B3164UALTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0
ZEN132V130A24YC Wickmann / Littelfuse	POLYZEN PPTC/ZENER SMD	2000
DSLP0120T023G6RP Wickmann / Littelfuse	SIDACTOR G.FAST 12V 30A SOT23-6	0
ZEN132V260A16YC Wickmann / Littelfuse	POLYZEN PPTC/ZENER SMD	0
B1160CCLRP Wickmann / Littelfuse	BATTRAX SLIC SNGL NEG 400A DO214	0
B1161UALTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0
P0901SALRP Wickmann / Littelfuse	SIDACTOR UNI 75V 50A DO214	0
SP721ABG Wickmann / Littelfuse	TVS ARRAY ESD 6 INPUT 30V 8-SOIC	10196
SDP2600Q38CB Wickmann / Littelfuse	SIDAC BI 220V 500A QFN 5X6 8L	0
IXBOD1-08 Wickmann / Littelfuse	IC SGL DIODE BOD 0.9A 800V FP	0
P1101UALRP Wickmann / Littelfuse	SIDACTOR SLIC UNI 4CHP 50A MS013	0
B2050CCLRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A DO214	0
P0721CA2LRP Wickmann / Littelfuse	SIDACTOR UNI 65V 50A DO214	0
B1161UC4LTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
SEP0080Q38CB Wickmann / Littelfuse	SIDACTOR ETHERNET POE 8V 100A	3373
P0721UALRP Wickmann / Littelfuse	SIDACTOR UNI 4CHP 65V 50A MS013	0
P1101UCLRP Wickmann / Littelfuse	SIDACTOR SLIC 4CHP 500A MS013	0
SP721APP Wickmann / Littelfuse	TVS ARRAY ESD 6 INPUT 30V 8-DIP	45544000
SEP0900Q38CB Wickmann / Littelfuse	SIDACTOR ETHERNET POE 90V 100A	6750

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials