TVS - Mixed Technology

Part Number	Description / PDF	Quantity
P1101SALRP Wickmann / Littelfuse	SIDACTOR SLIC UNI 50A DO214	0
B1101UC4LRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
B1101UALTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0
B1200CCLRP Wickmann / Littelfuse	BATTRAX SLIC SNGL NEG 400A DO214	0
P1701Q22CLRP Wickmann / Littelfuse	SIDAC UNI 160V 500A QFN 3.3 2L	0
P0721UCLRP Wickmann / Littelfuse	SIDACTOR SYM 4CHP 65V 500A MS013	0
SEP0640Q38CB Wickmann / Littelfuse	SIDACTOR ETHERNET POE 64V 100A	1445
B1161UCLTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
P1101SDLRP Wickmann / Littelfuse	SIDACTOR UNI 90V 1000A DO214 2L	0
P1301DF-1E Wickmann / Littelfuse	SIDACTOR SLIC ENH 120V 30A 8SOIC	9980
B1160CALRP Wickmann / Littelfuse	BATTRAX SLIC SGL NEG 50A DO214	0
B1100CCLRP Wickmann / Littelfuse	BATTRAX SLIC SGL NEG 400A DO-214	0
P1301SALRP Wickmann / Littelfuse	SIDACTOR SLIC UNI 50A DO214	0
B1200CALRP Wickmann / Littelfuse	BATTRAX SLIC SNGL NEG 150A DO214	0
P0991DF-1E Wickmann / Littelfuse	SIDACTOR SLIC ENHC 80V 30A 8SOIC	0
IXBOD1-25RD Wickmann / Littelfuse	IC DIODE MODULE BOD 0.2A 2500V	20
P0641UALRP Wickmann / Littelfuse	SIDACTOR UNI 4CHP 58V 50A MS013	0
B1161UALRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0
SDP3100Q38CB Wickmann / Littelfuse	SIDAC BI 275V 500A QFN 5X6 8L	0
SP723ABTG Wickmann / Littelfuse	TVS ARRAY ESD 6 INPUT 30V 8-SOIC	5259

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials