TVS - Mixed Technology

Part Number	Description / PDF	Quantity
B1100CCLRP Wickmann / Littelfuse	BATTRAX SLIC SGL NEG 400A DO-214	0
TISP8211MDR-S J.W. Miller / Bourns	SURGE PROT THYRIST POS V SLIC	0
TL7726CP Texas Instruments	IC HEX CLAMPING CIRCUIT 8-DIP	142
TVS3300DRVR Texas Instruments	TVS MIXED TECHNOLOGY 40VC 6WSON	25115
NCP3712ASNT1G Sanyo Semiconductor/ON Semiconductor	IC SWITCH OVP HIGH SIDE SC74-6	167057000
VK105MK151R014P050 KEMET	VARISTOR 22V 150A RADIAL	0
SN75240PWRG4 Texas Instruments	IC DUAL USB PORT TVS 8-TSSOP	601
MAX367EPN Analog Devices, Inc.	SIGNAL-LINE CIRCUIT PROTECTOR	26
VK103MK151R050P050 KEMET	VARISTOR 82V 150A RADIAL	0
P1301SALRP Wickmann / Littelfuse	SIDACTOR SLIC UNI 50A DO214	0
B72587G3140S200 TDK EPCOS	VARISTOR 22V 800A RADIAL	0
82356240030 Würth Elektronik Midcom	ESD SUPPRESSOR 0603; 24VDC; 3PF	4902
GMOV-14D650K J.W. Miller / Bourns	GMOV 14MM, 65VRMS	350
GMOV-20D271K J.W. Miller / Bourns	GMOV 20MM, 275VRMS	279
V2F114A300Y2EDP Elco (AVX)	VARISTOR CAP FEEDTHRU 14V 0805	13000
V2F105A150Y2EDP Elco (AVX)	VARISTOR CAP FEEDTHRU 5.6V 0805	500
B1200CALRP Wickmann / Littelfuse	BATTRAX SLIC SNGL NEG 150A DO214	0
2838775 Phoenix Contact	SURGE PROTECTION PLUG 12VDC	10168
V2F118C400Y1FDP Elco (AVX)	VARISTOR CAP FEEDTHRU 18V 0805	753
P0991DF-1E Wickmann / Littelfuse	SIDACTOR SLIC ENHC 80V 30A 8SOIC	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials