TVS - Mixed Technology

Image Part Number Description / PDF Quantity Rfq
2906318

2906318

Phoenix Contact

VAL-MS+TE-AR 75 VF/P-FM

10

TISP9110MDMR-S

TISP9110MDMR-S

J.W. Miller / Bourns

SURGE PROT THYRIST NEG/POS SLIC

10000

TL7726IDR

TL7726IDR

Texas Instruments

IC HEX CLAMPING CIRCUITS 8-SOIC

9836

VM105MK801R040P050

VM105MK801R040P050

KEMET

VARISTOR 68V 800A RADIAL

0

VK104MM151R004P050

VK104MM151R004P050

KEMET

VARISTOR 8V 150A RADIAL

0

2905233

2905233

Phoenix Contact

PLT-SEC-T3-60-P

10

1840-24-A1

1840-24-A1

J.W. Miller / Bourns

SURGE PROTECTION DEVICE 24V

0

MAX366ESA+

MAX366ESA+

Maxim Integrated

IC CIRC PROT SIGNAL-LINE 8-SOIC

3051000

2905236

2905236

Phoenix Contact

PLT-SEC-T3-3S-230-P

0

VK103MK151R040P050

VK103MK151R040P050

KEMET

VARISTOR 68V 150A RADIAL

0

B1200CCLRP

B1200CCLRP

Wickmann / Littelfuse

BATTRAX SLIC SNGL NEG 400A DO214

0

1669-01

1669-01

J.W. Miller / Bourns

SIGNAL PROTECT FIELD

0

STF203-15.TCT

STF203-15.TCT

Semtech

TVS USB 150OHM RES 5.25V SC70-6

4133

TL7726ID

TL7726ID

Texas Instruments

IC HEX CLAMPING CIRCUIT 8-SOIC

174

41206ESDA-TR1

41206ESDA-TR1

PowerStor (Eaton)

SUPPRESSOR ESD 12VDC 4/1206 SMD

38959

ECLAMP2522P.TCT

ECLAMP2522P.TCT

Semtech

IC ESD/EMI PROT DIODES

5411

VM155MK801R014P050

VM155MK801R014P050

KEMET

VARISTOR 24V 800A RADIAL

0

NCP360SNAFT1G

NCP360SNAFT1G

BUFFER/INVERTER BASED PERIPHERAL

47878

TL7726QDRG4

TL7726QDRG4

Texas Instruments

TL7726 HEX CLAMPING CIRCUIT

29351

P1701Q22CLRP

P1701Q22CLRP

Wickmann / Littelfuse

SIDAC UNI 160V 500A QFN 3.3 2L

0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Silicon-Polymer Hybrid TVSCombines fast silicon diode response with polymer self-recovery capabilityUSB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVSStacked silicon layers for multi-stage voltage clampingIndustrial power supplies, 5G base stations
Glass-Passivated Hybrid TVSHermetic glass encapsulation with integrated RC filteringAutomotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

  • Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
  • Passivation layer: Borosilicate glass or polymer composite
  • Electrode system: Multi-fingered aluminum-copper hybrid metallization
  • Thermal management: Embedded graphite heat spreader
  • Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

ParameterImportance
Breakdown Voltage (Vbr)Determines protection threshold for normal operation
Clamping Voltage (Vc)Defines maximum voltage transmitted to protected circuit
Response Time (tr)Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)Indicates energy absorption capability during transients
Capacitance (Cj)Critical for high-speed signal integrity preservation
Operating TemperatureDefines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

  • Telecommunications: 5G NR base stations, optical transceivers
  • Industrial Automation: PLC systems, motor drives
  • Automotive Electronics: CAN-FD interfaces, LiDAR systems
  • Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
LittelfuseSMxxxHCA Series40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronicsTVSH SeriesAutomotive qualified, AEC-Q101 certified, 300W peak power
BournsPGB1 SeriesMulti-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

  • Match breakdown voltage to system operating voltage (typically 10-15% margin)
  • Verify clamping voltage compatibility with protected IC's maximum ratings
  • Consider parasitic capacitance for high-speed (>1Gbps) applications
  • Evaluate thermal derating curves for intended operating environment
  • Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
  • Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

  • Integration of AI-based predictive protection algorithms
  • Development of 3D-printed nanocomposite TVS structures
  • Adoption of wafer-level packaging for 0.1pF capacitance levels
  • Implementation of energy recovery features in hybrid architectures
  • Advancements in terahertz transient suppression materials
RFQ BOM Call Skype Email
Top