TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXL15KP36CAE3

MXL15KP36CAE3

Roving Networks / Microchip Technology

TVS DIODE 36V 59.7V CASE 5A

0

MSMBG6.0A

MSMBG6.0A

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO215AA

0

MXP4KE68A

MXP4KE68A

Roving Networks / Microchip Technology

TVS DIODE 58.1V 92V DO204AL

0

MPLAD30KP90CAE3

MPLAD30KP90CAE3

Roving Networks / Microchip Technology

TVS DIODE 90V 146V PLAD

0

MXSMLJ12CAE3

MXSMLJ12CAE3

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO214AB

0

MXLSMBJ58A

MXLSMBJ58A

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AA

0

MX5KP54A

MX5KP54A

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V CASE 5A

0

MAP4KE30A

MAP4KE30A

Roving Networks / Microchip Technology

TVS DIODE 25.6V 41.4V DO204AL

0

SMBJ43CAE3/TR13

SMBJ43CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AA

0

MXLSMCJLCE9.0A

MXLSMCJLCE9.0A

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO214AB

0

MAP4KE75AE3

MAP4KE75AE3

Roving Networks / Microchip Technology

TVS DIODE 64.1V 103V DO204AL

0

MXSMBJ18A

MXSMBJ18A

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO214AA

0

MPLAD15KP26A

MPLAD15KP26A

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V PLAD

0

MASMBJ14CA

MASMBJ14CA

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AA

0

MART100KP170CAE3

MART100KP170CAE3

Roving Networks / Microchip Technology

TVS DIODE 170V 334V CASE 5A

0

SM8LC24/TR13

SM8LC24/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

MXLP4KE36A

MXLP4KE36A

Roving Networks / Microchip Technology

TVS DIODE 30.8V 49.9V DO204AL

0

MXLSMBG48A

MXLSMBG48A

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO215AA

0

MXL15KP30A

MXL15KP30A

Roving Networks / Microchip Technology

TVS DIODE 30V 50.7V CASE 5A

0

MXL15KP180AE3

MXL15KP180AE3

Roving Networks / Microchip Technology

TVS DIODE 180V 291V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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