TVS - Diodes

Image	Part Number	Description / PDF	Quantity	Rfq
	PESD5V0U1UCL,315 NXP Semiconductors	TVS DIODE SOD882	0
	IP4302CX2/LF,315 NXP Semiconductors	TVS DIODE 2CSP	0
	IP4303CX4/LF,135 NXP Semiconductors	TVS DIODE 4CSP	0
	IP4332CX5/LF,135 NXP Semiconductors	TVS DIODE 5WLCSP	0
	IP4357CX17,135 NXP Semiconductors	TVS DIODE 17CSP	0
	PESD24VS2UT/ZLR NXP Semiconductors	DIODE ESD SOT23	0
	PESD5V0S1BA/ZLX NXP Semiconductors	DIODE ESD PROTECT SOD323	0
	PESD5V2S2UT/ZLR NXP Semiconductors	DIODE ESD PROTECT SOT23	0
	IP4062CX18/LF,135 NXP Semiconductors	TVS DIODE 18CSP	0
	PESD5V0C1USF/S50YL NXP Semiconductors	DIODE ESD BIDIRECT SOD962	0
	PESD5V0C1BSF/S50YL NXP Semiconductors	DIODE ESD BIDIRECT SOD962	0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Unidirectional TVS	Single-polarity protection, asymmetrical voltage response	DC power lines, automotive systems
Bidirectional TVS	Symmetrical protection for AC signals	Telecom interfaces (e.g., RJ45), USB 3.0	Multichannel TVS	Multiple protection paths in single package	HDMI ports, DisplayPort interfaces	Automotive TVS	AEC-Q101 qualified, high surge capability	ECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

Silicon epitaxial layer for precise voltage control
Passivation layer (SiO2/Nitride) to reduce leakage current
Backside metallization for low-inductance packaging
DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

Parameter	Description	Importance
Breakdown Voltage (Vbr)	Minimum voltage where TVS activates	Determines protection threshold
Clamping Voltage (Vc)	Max voltage during transient event	Must be below protected IC's max rating
Peak Pulse Current (Ipp)	Maximum surge current handling	Defines robustness against large transients
Response Time (tresp)	Time to switch from off to on state	Crucial for ESD protection (typically <1ps)
Leakage Current (Ir)	Off-state current at working voltage	Impacts power efficiency

5. Application Areas

Major industries and typical equipment:

Telecommunications: 5G base stations, optical transceivers
Automotive: CAN/LIN bus protection, ADAS sensors
Industrial: PLCs, motor drives
Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

Manufacturer	Product Series	Key Features
Littelfuse	SP301x Series	USB 3.1 Gen2 protection, 0.35pF capacitance
ON Semiconductor	NUP41060	6-channel ESD protection, 30kV HBM
STMicroelectronics	ESDA8401	Automotive-grade, 150A surge rating
Infineon	ESD320	Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

Operating voltage must be below Vbr (typically 1.1 Voper)
Clamping voltage should stay under protected IC's maximum ratings
Packaging selection based on board space and thermal requirements
Environmental factors: temperature range, humidity resistance
Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
Integration: Combo devices with filters and shielding
Higher robustness: 40kV+ ESD protection for industrial IoT
Advanced materials: Silicon carbide (SiC) for high-temperature applications
AI-driven selection tools for optimized component matching