TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
UDT26A05L05-LC1

UDT26A05L05-LC1

Yageo

TVS DIODE

0

SDD32A05L01

SDD32A05L01

Yageo

TVS DIODE

0

SMBJ43A/TR13

SMBJ43A/TR13

Yageo

TVS DIODE

0

SMBJ6.0CA/TR13

SMBJ6.0CA/TR13

Yageo

TVS DIODE

0

SMBJ24A/TR13

SMBJ24A/TR13

Yageo

TVS DIODE

0

SMBJ5.0A/TR13

SMBJ5.0A/TR13

Yageo

TVS DIODE

0

SMCJ24A/TR13

SMCJ24A/TR13

Yageo

TVS DIODE

0

SMBJ22A/TR13

SMBJ22A/TR13

Yageo

TVS DIODE

0

SDT23C24L02-AT

SDT23C24L02-AT

Yageo

TVS DIODE

0

UDD32C24L01

UDD32C24L01

Yageo

TVS DIODE

0

P6SMB6.8A/TR13

P6SMB6.8A/TR13

Yageo

TVS DIODE

0

SMCJ64CA/TR13

SMCJ64CA/TR13

Yageo

TVS DIODE

0

1.5KE6.8CA/B

1.5KE6.8CA/B

Yageo

TVS DIODE

0

SMAJ7.0CA/TR13

SMAJ7.0CA/TR13

Yageo

TVS DIODE

0

SMAJ5.0CA/TR7

SMAJ5.0CA/TR7

Yageo

SMAJ DO214AC, BIDIRECTIONAL 5V 9

0

SMBJ26CA/TR13

SMBJ26CA/TR13

Yageo

TVS DIODE

0

SET23A05L02

SET23A05L02

Yageo

TVS DIODE

0

SMBJ5.0CA/TR13

SMBJ5.0CA/TR13

Yageo

TVS DIODE

0

UAD8C05L01

UAD8C05L01

Yageo

TVS DIODE

0

SMAJ28CA/TR13

SMAJ28CA/TR13

Yageo

TVS DIODE

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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