TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P6SMB120AHM3_A/I

P6SMB120AHM3_A/I

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

SAC6.0-E3/73

SAC6.0-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 6V 11.2V DO204AC

0

SMA6F8.5A-M3/6B

SMA6F8.5A-M3/6B

Vishay General Semiconductor – Diodes Division

TVS DIODE 8.5V 18.7V DO221AC

0

P4KE220CAHE3/54

P4KE220CAHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 185V 328V DO204AL

0

3KASMC43AHM3_B/H

3KASMC43AHM3_B/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 43V 69.4V DO214AB

1245

SMBG51CAHE3/5B

SMBG51CAHE3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 51V 82.4V DO215AA

0

SMBJ12D-M3/I

SMBJ12D-M3/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 12V 19.6V DO214AA

8972

1N6378HE3_A/C

1N6378HE3_A/C

Vishay General Semiconductor – Diodes Division

TVS DIODE 18V 25.2V 1.5KE

0

SMCG5.0CA-E3/9AT

SMCG5.0CA-E3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 5V 9.2V DO215AB

0

TPSMA43AHM3_B/H

TPSMA43AHM3_B/H

Vishay General Semiconductor – Diodes Division

400W 43V 5% SMA PAR

0

SMCJ51CAHE3/9AT

SMCJ51CAHE3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 51V 82.4V DO214AB

0

P2SMA220A-M3/5AT

P2SMA220A-M3/5AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 185V 328V DO214AC

0

P6SMB16CA-M3/52

P6SMB16CA-M3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 13.6V 22.5V DO214AA

0

SMCJ11AHE3/57T

SMCJ11AHE3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 11V 18.2V DO214AB

0

1.5KE47A-E3/51

1.5KE47A-E3/51

Vishay General Semiconductor – Diodes Division

TVS DIODE 40.2V 64.8V 1.5KE

0

1.5SMC36A-E3/57T

1.5SMC36A-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 30.8V 49.9V DO214AB

0

SMA5J33CAHE3_A/I

SMA5J33CAHE3_A/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 500W DO214AC

0

TPSMA8.2AHE3_B/I

TPSMA8.2AHE3_B/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 7.02V 12.1V DO214AC

0

1.5SMC120CA-E3/9AT

1.5SMC120CA-E3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 102V 165V DO214AB

0

SMBG100AHE3/52

SMBG100AHE3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 100V 162V DO215AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top