TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
VTVS52ASMF-HM3-18

VTVS52ASMF-HM3-18

Vishay General Semiconductor – Diodes Division

TVS DIODE 52.2V 89V DO219AB

0

P6KE13CA-E3/54

P6KE13CA-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 11.1V 18.2V DO204AC

0

P4SMA220AHE3_A/I

P4SMA220AHE3_A/I

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AC

0

SMBJ7.0CA-M3/52

SMBJ7.0CA-M3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 7V 12V DO214AA

0

SMCJ16A-E3/9AT

SMCJ16A-E3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 16V 26V DO214AB

0

SMA6F6.0A-M3/6B

SMA6F6.0A-M3/6B

Vishay General Semiconductor – Diodes Division

TVS DIODE 6V 13.7V DO221AC

0

1.5SMC36CA-E3/57T

1.5SMC36CA-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 30.8V 49.9V DO214AB

625

P6KE16A-E3/73

P6KE16A-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 13.6V 22.5V DO204AC

0

1.5KE27AHE3_A/C

1.5KE27AHE3_A/C

Vishay General Semiconductor – Diodes Division

TVS DIODE 23.1V 37.5V 1.5KE

1130

P4KE62AHE3/73

P4KE62AHE3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 53V 85V DO204AL

0

P6KE16CAHE3/54

P6KE16CAHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 13.6V 22.5V DO204AC

0

SMBJ6.0D-M3/I

SMBJ6.0D-M3/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 6V 10.2V DO214AA

9294

P6SMB56A-M3/5B

P6SMB56A-M3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 47.8V 77V DO214AA

0

P6KE27A-E3/73

P6KE27A-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 23.1V 37.5V DO204AC

0

SMPC26AN-M3/I

SMPC26AN-M3/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 26V 42.1V TO277A

0

SMAJ7.0AHE3_A/H

SMAJ7.0AHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AC

0

GSOT12-G3-18

GSOT12-G3-18

Vishay General Semiconductor – Diodes Division

TVS DIODE 12V 26V SOT23

0

1.5SMC82A-E3/57T

1.5SMC82A-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 70.1V 113V DO214AB

19

SMCJ36A-E3/57T

SMCJ36A-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 36V 58.1V DO214AB

455

1.5KE200A-E3/54

1.5KE200A-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 171V 274V 1.5KE

26144

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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