TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
CEZ8V2,L3F

CEZ8V2,L3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:8.2V PD:0.15W

0

DF5A6.2CJE,LM

DF5A6.2CJE,LM

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5VWM ESV PAC

0

DF2S6.2ASL,L3F

DF2S6.2ASL,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5VWM SL2-2

43015

DF2S24FS,L3M

DF2S24FS,L3M

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 19V SOD923

7437

DF5A6.2JE,LM

DF5A6.2JE,LM

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3VWM ESV PAC

5929

DF5A3.3JE,LM

DF5A3.3JE,LM

Toshiba Electronic Devices and Storage Corporation

UNIDIRECTIONAL ESD DIODE 4 LINES

7879

DF3D6.8MFV(TL3,T)

DF3D6.8MFV(TL3,T)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V 15V VESM

2620

MUZ30V,LF

MUZ30V,LF

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:30V PD:0.15W

0

DF5A5.6FTE85LF

DF5A5.6FTE85LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 2.5V SMV

120

CUZ30V,H3F

CUZ30V,H3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:30V PD:0.2W

0

DF6F6.8MTU,LF

DF6F6.8MTU,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V 24V UF6

5846

DF3A3.3CT(TPL3)

DF3A3.3CT(TPL3)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 1V CST3

0

CEZ30V,L3F

CEZ30V,L3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:30V PD:0.15W

0

DF2B7AE,L3F

DF2B7AE,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5.5V 20V ESC

0

DF2S7MSL,L3F

DF2S7MSL,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V 20V SL2

19702

DF3A5.6FU(TE85L,F)

DF3A5.6FU(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 2.5V USM

354

DF5G7M2N,LF

DF5G7M2N,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5.5V 20V 5DFN

0

DF2S6.8UCT,L3F

DF2S6.8UCT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 19V CST2

0

MUZ16V,LF

MUZ16V,LF

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:16V PD:0.15W

0

DF2S6M5SL,L3F

DF2S6M5SL,L3F

Toshiba Electronic Devices and Storage Corporation

UNI-DIRECTIONAL ESD PROTECTION D

9400

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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