TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTXV1N6105

JTXV1N6105

Semtech

T MET BI 500W 9.1V

0

JTXV1N6110

JTXV1N6110

Semtech

T MET BI 500W 15V

0

JTX1N6135

JTX1N6135

Semtech

T MET BI 500W 160V

0

1N6138US

1N6138US

Semtech

TVS DIODE 5.2V 11V

0

JTX1N6135A

JTX1N6135A

Semtech

T MET BI 500W 160V

0

JTX1N6106A

JTX1N6106A

Semtech

T MET BI 500W 10V

0

UCLAMP0511Z.TNT

UCLAMP0511Z.TNT

Semtech

TVS DIODE 5V 15V SLP0603P2X3

0

JTXV1N6159

JTXV1N6159

Semtech

T MET BI 1500W

0

JTX1N6123AUS

JTX1N6123AUS

Semtech

T MET BI 500W 51V SM

0

JTXV1N6151AUS.TR

JTXV1N6151AUS.TR

Semtech

TVS DIODE 18.2V 33.3V

0

JTX1N6116AUS

JTX1N6116AUS

Semtech

T MET BI 500W 27V

0

JTXV1N6152

JTXV1N6152

Semtech

T MET BI 1500W

0

JTX1N6128

JTX1N6128

Semtech

T MET BI 500W 62.2V HR

0

JTX1N6120US

JTX1N6120US

Semtech

TVS BI 500W 35.1V SM

0

JTXV1N6474

JTXV1N6474

Semtech

TVS UNI 1500W 33V

0

1N6158A

1N6158A

Semtech

TVS DIODE 35.8V 64.6V AXIAL

0

1N6148US

1N6148US

Semtech

TVS DIODE 13.7V 26.3V

0

JTX1N6157AUS

JTX1N6157AUS

Semtech

T MET BI 1500W 43V SM

0

JTX1N6131AUS

JTX1N6131AUS

Semtech

T MET BI 500W 110V SM

0

JTX1N6124A

JTX1N6124A

Semtech

T MET BI 500W 56V

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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