TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTXV1N6125A

JTXV1N6125A

Semtech

T MET BI 500W 62V

0

JTX1N6117AUS

JTX1N6117AUS

Semtech

T MET BI 500W 30V

0

JTXV1N6103AUS

JTXV1N6103AUS

Semtech

T MET BI 500W 7.5V SM

0

JTXV1N6117US

JTXV1N6117US

Semtech

T MET BI 500W 27V US

0

JTXV1N6119AUS

JTXV1N6119AUS

Semtech

T MET BI 500W 36V

0

JTX1N6150AUS

JTX1N6150AUS

Semtech

T MET BI 1500W SM

0

JTXV1N6467US

JTXV1N6467US

Semtech

T UNI 500W SM

0

1N6138AUS

1N6138AUS

Semtech

TVS DIODE C SQ-MELF

0

JTXV1N6136A

JTXV1N6136A

Semtech

T MET BI 500W 180V

0

JTX1N6169

JTX1N6169

Semtech

T MET BI 1500W 98.8V HR

0

1N6152US

1N6152US

Semtech

TVS DIODE 20.6V 39.2V

0

1N6159US

1N6159US

Semtech

TVS DIODE 38.8V 73.5V

0

1N6164AUS

1N6164AUS

Semtech

TVS DIODE 62.2V 112.8V

0

1N6170US

1N6170US

Semtech

TVS DIODE 114V 216.2V

0

1N6169AUS

1N6169AUS

Semtech

TVS DIODE 98.8V 178.8V

0

JTXV1N6116

JTXV1N6116

Semtech

T MET BI 500W 27V

0

JTXV1N6159A

JTXV1N6159A

Semtech

T MET BI 1500W

0

JTX1N6167AUS

JTX1N6167AUS

Semtech

T MET BI 1500W 110V SM

0

JTX1N6142

JTX1N6142

Semtech

T MET BI 1500W 7.6V HR

0

JTX1N6119

JTX1N6119

Semtech

T MET BI 500W 36V

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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