TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTXV1N6170

JTXV1N6170

Semtech

T MET BI 1500W

0

1N6151US

1N6151US

Semtech

TVS DIODE 18.2V 34.8V

0

JTXV1N6114US

JTXV1N6114US

Semtech

T MET BI 500W 22V

0

JTX1N6108AUS

JTX1N6108AUS

Semtech

T MET BI 500W 12V SM

0

JTX1N6161

JTX1N6161

Semtech

T MET BI 1500W

0

UCLAMP6514P.TNT

UCLAMP6514P.TNT

Semtech

65V, 4-LINE ESD PROTECTION

0

JTX1N6151

JTX1N6151

Semtech

T MET BI 1500W

0

JTX1N6150

JTX1N6150

Semtech

T MET BI 1500W

0

1N6165AUS

1N6165AUS

Semtech

TVS DIODE 69.2V 125.1V

0

1N6168AUS

1N6168AUS

Semtech

TVS DIODE 91.2V 165.1V

0

1N6140US

1N6140US

Semtech

TVS DIODE 6.2V 12.7V

0

JTX1N6121

JTX1N6121

Semtech

T MET BI 500W 43V

0

JTXV1N6103US

JTXV1N6103US

Semtech

T MET BI 500W 7.5V SM

0

JAN1N6154AUS

JAN1N6154AUS

Semtech

TVS BI 1500W 31.4V SM

0

JTXV1N6112

JTXV1N6112

Semtech

T MET BI 500W 18V

0

JTX1N6102AUS

JTX1N6102AUS

Semtech

T MET BI 500W 6.8V SM

0

JTX1N6147US

JTX1N6147US

Semtech

TVS BI 1500W 14.4V SM

0

JTX1N6109A

JTX1N6109A

Semtech

T MET BI 500W 13V

0

JTXV1N6119A

JTXV1N6119A

Semtech

T MET BI 500W 36V

0

RCLAMP0516P.TCT

RCLAMP0516P.TCT

Semtech

TVS DIODE 5V 6.5V SLP3313P6

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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