TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTX1N6148A

JTX1N6148A

Semtech

T MET BI 1500W

0

JTX1N6171AUS

JTX1N6171AUS

Semtech

T MET BI 1500W 160V SM

0

JTXV1N6122AUS

JTXV1N6122AUS

Semtech

T MET BI 500W 47V

0

JAN1N6146AUS

JAN1N6146AUS

Semtech

TVS BI 1500W 14.25V SM

0

JTXV1N6172A

JTXV1N6172A

Semtech

T MET BI 1500W

0

1N6172

1N6172

Semtech

TVS DIODE 136.8V 257.4V AXIAL

0

JTXV1N6105A

JTXV1N6105A

Semtech

T MET BI 500W 9.1V

0

JTXV1N6140AUS

JTXV1N6140AUS

Semtech

T MET BI 1500W SM

0

JTXV1N6144A

JTXV1N6144A

Semtech

T MET BI 1500W

0

JTXV1N6169US

JTXV1N6169US

Semtech

TVS BI 1500 W 123.5V SM

0

JTX1N6103

JTX1N6103

Semtech

T MET BI 500W 7V5 19500/516

0

JTXV1N6106A

JTXV1N6106A

Semtech

T MET BI 500W 10V

0

JTX1N6152

JTX1N6152

Semtech

T MET BI 1500W 20.6V HR

0

JTXV1N6166A

JTXV1N6166A

Semtech

T MET BI 1500W

0

JTX1N6121A

JTX1N6121A

Semtech

T MET BI 500W 43V

0

JTXV1N6128AUS

JTXV1N6128AUS

Semtech

T MET BI 500W 82V

0

JAN1N6151AUS

JAN1N6151AUS

Semtech

TVS BI 1500W 22.8V SM

0

JTX1N6108

JTX1N6108

Semtech

T MET BI 500W 12V

0

JTXV1N6146A

JTXV1N6146A

Semtech

T MET BI 1500W

0

JTXV1N6118

JTXV1N6118

Semtech

T MET BI 500W 33V

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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