TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1N6158US

1N6158US

Semtech

TVS DIODE 35.8V 67.7V

0

1N6166US

1N6166US

Semtech

TVS DIODE 76V 144.1V

0

JTX1N6102

JTX1N6102

Semtech

T MET BI 500W 6V8 19500/516

0

JTX1N6122US

JTX1N6122US

Semtech

TVS BI 500W 42.3V SM

0

1N6155US

1N6155US

Semtech

TVS DIODE 27.4V 52.3V

0

JTX1N6155A

JTX1N6155A

Semtech

T MET BI 1500W

0

1N6476US

1N6476US

Semtech

TVS DIODE 51.6V 78.5V GMELF

0

JTX1N6473.TR

JTX1N6473.TR

Semtech

UNI TVS 1500 W 24 V

0

JTX1N6113

JTX1N6113

Semtech

T MET BI 500W 20V

0

JAN1N6138US

JAN1N6138US

Semtech

TVS BI 1500W 6.12V SM

0

JTX1N6173AUS

JTX1N6173AUS

Semtech

T MET BI 1500W SM

0

JTX1N6121AUS

JTX1N6121AUS

Semtech

T MET BI 500W 43V

0

JTX1N6142A

JTX1N6142A

Semtech

T MET BI 1500W

0

JTXV1N6143

JTXV1N6143

Semtech

T MET BI 1500W

0

JTXV1N6147AUS

JTXV1N6147AUS

Semtech

T MET BI 1500W 16V SM

0

JTX1N6158AUS

JTX1N6158AUS

Semtech

T MET BI 1500W

0

JTXV1N6160

JTXV1N6160

Semtech

T MET BI 1500W

0

JTX1N6147

JTX1N6147

Semtech

T MET BI 1500W

0

UCLAMP1211Z.TFT

UCLAMP1211Z.TFT

Semtech

TVS DIODE 12V 25V SLP0603P2X3

0

JTXV1N6141AUS

JTXV1N6141AUS

Semtech

T MET BI 1500W 9V

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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