TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTXV1N6137A

JTXV1N6137A

Semtech

T MET BI 500W 200V

0

JTXV1N6114A

JTXV1N6114A

Semtech

T MET BI 500W 22V

0

1N6165A

1N6165A

Semtech

TVS DIODE 69.2V 125.1V AXIAL

0

JTX1N6126AUS

JTX1N6126AUS

Semtech

T MET BI 500W 68V SM

0

1N6106A

1N6106A

Semtech

TVS DIODE 7.6V 14.5V AXIAL

0

JTX1N6145

JTX1N6145

Semtech

T MET BI 1500W

0

JTX1N6145A

JTX1N6145A

Semtech

T MET BI 1500W

0

JTXV1N6107A

JTXV1N6107A

Semtech

T MET BI 500W 11V

0

JTX1N6143

JTX1N6143

Semtech

T MET BI 1500W

0

JTX1N6112

JTX1N6112

Semtech

T MET BI 500W 18V

0

1N6173

1N6173

Semtech

TVS DIODE 152V 286V AXIAL

0

1N6162AUS

1N6162AUS

Semtech

TVS DIODE 51.7V 97.1V

0

JTX1N6144

JTX1N6144

Semtech

T MET BI 1500W

0

1N6140

1N6140

Semtech

TVS DIODE 6.2V 12.7V AXIAL

0

JTX1N6106AUS

JTX1N6106AUS

Semtech

T MET BI 500W 10V SM

0

JTX1N6114

JTX1N6114

Semtech

T MET BI 500W 22V

0

JTXV1N6124A

JTXV1N6124A

Semtech

T MET BI 500W 56V

0

JTXV1N6148A

JTXV1N6148A

Semtech

T MET BI 1500W

0

JTXV1N6126

JTXV1N6126

Semtech

T MET BI 500W 68V

0

JTXV1N6139AUS

JTXV1N6139AUS

Semtech

T MET BI 1500W 5.7V SM

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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