TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTXV1N6140A

JTXV1N6140A

Semtech

T MET BI 1500W

0

JTX1N6163AUS

JTX1N6163AUS

Semtech

T MET BI 1500W SM

0

1N6172US

1N6172US

Semtech

TVS DIODE 136.8V 257.4V

0

JTXV1N6123

JTXV1N6123

Semtech

T MET BI 500W 51V

0

JTXV1N6138

JTXV1N6138

Semtech

T MET BI 1500W

0

JTXV1N6127AUSTR

JTXV1N6127AUSTR

Semtech

T MET BI 500W 75V

0

JTX1N6154A

JTX1N6154A

Semtech

T MET BI 1500W

0

JTX1N6156

JTX1N6156

Semtech

T MET BI 1500W

0

JTXV1N6104A

JTXV1N6104A

Semtech

T MET BI 500W 8.2V

0

JTXV1N6103A

JTXV1N6103A

Semtech

T MET BI 500W 7.5V

0

1N6112A

1N6112A

Semtech

TVS DIODE 13.7V 25.1V AXIAL

0

UCLAMP2461P.TNT

UCLAMP2461P.TNT

Semtech

24V, 1-LINE SURGE PROTECTION

0

JTX1N6474US.TR

JTX1N6474US.TR

Semtech

TVS DIODE 30.5V 47.5V

0

JTXV1N6120AUS

JTXV1N6120AUS

Semtech

T MET BI 500W 39V

0

JTXV1N6120A

JTXV1N6120A

Semtech

T MET BI 500W 39V

0

JTX1N6107AUS

JTX1N6107AUS

Semtech

T MET BI 500W 11V SM

0

JTXV1N6164

JTXV1N6164

Semtech

T MET BI 1500W

0

1N6163AUS

1N6163AUS

Semtech

TVS DIODE 56V 103.1V

0

1N6143AUS

1N6143AUS

Semtech

TVS DIODE 8.4V 15.6V

0

JTXV1N6118AUS

JTXV1N6118AUS

Semtech

T MET BI 500W 33V

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top