TVS - Diodes

Image	Part Number	Description / PDF	Quantity	Rfq
	4SMF26CA Rectron USA	TVS 400W 26V 42.1V BI SMAF	0
	3KPSMC45 Rectron USA	TVS DIODE 3KW 61.1V SMC	0
	P6FMBJ47A Rectron USA	TVS DIO 600W 47V 64.8V UNI SMB	0
	TFMBJ6.5A Rectron USA	TVS DIO 600W 6.5V 11.2V UNI SMB	0
	5.0SMCJ11A Rectron USA	TVS DIODE 5KW 11V 18.2V UNI SMC	0
	1.5FMCJ68CA Rectron USA	TVS DIODE 1500W 58.1V BI-DI SMC	0
	4SMF110A Rectron USA	TVS 400W 110V 177V UNI SMAF	0
	P4FMAJ36A Rectron USA	TVS DIO 400W 36V 49.9V UNI SMA	0
	TFMBJ75A Rectron USA	TVS DIO 600W 75V 121V UNI SMB	0
	TFMCJ60CA Rectron USA	TVS DIO 1500W 60V 96.8V BI SMC	0
	3KPSMC36 Rectron USA	TVS DIODE 3KW 48.9V SMC	0
	TFMCJ18A Rectron USA	TVS DIO 1500W 18V 29.2V UNI SMC	0
	SMA6F60CA Rectron USA	TVS DIO 600W 60V 96.8V BI SMAF	0
	P4FMAJ15A Rectron USA	TVS DIO 400W 15V 21.2V UNI SMA	0
	SM5S11A Rectron USA	TVS DIODE 5W 11V 18.2V DO-218	0
	SM8S14 Rectron USA	TVS DIODE 8W 14V 25.8V DO-218	0
	3KPSMC18A Rectron USA	TVS DIODE 3KW 22.1V SMC	0
	SM8S10 Rectron USA	TVS DIODE 8W 10V 18.8V DO-218	0
	1.5FMCJ91CA Rectron USA	TVS DIODE 1500W 77.8V BI-DI SMC	0
	SM8S26 Rectron USA	TVS DIODE 8W 26V 46.6V DO-218	0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Unidirectional TVS	Single-polarity protection, asymmetrical voltage response	DC power lines, automotive systems
Bidirectional TVS	Symmetrical protection for AC signals	Telecom interfaces (e.g., RJ45), USB 3.0	Multichannel TVS	Multiple protection paths in single package	HDMI ports, DisplayPort interfaces	Automotive TVS	AEC-Q101 qualified, high surge capability	ECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

Silicon epitaxial layer for precise voltage control
Passivation layer (SiO2/Nitride) to reduce leakage current
Backside metallization for low-inductance packaging
DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

Parameter	Description	Importance
Breakdown Voltage (Vbr)	Minimum voltage where TVS activates	Determines protection threshold
Clamping Voltage (Vc)	Max voltage during transient event	Must be below protected IC's max rating
Peak Pulse Current (Ipp)	Maximum surge current handling	Defines robustness against large transients
Response Time (tresp)	Time to switch from off to on state	Crucial for ESD protection (typically <1ps)
Leakage Current (Ir)	Off-state current at working voltage	Impacts power efficiency

5. Application Areas

Major industries and typical equipment:

Telecommunications: 5G base stations, optical transceivers
Automotive: CAN/LIN bus protection, ADAS sensors
Industrial: PLCs, motor drives
Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

Manufacturer	Product Series	Key Features
Littelfuse	SP301x Series	USB 3.1 Gen2 protection, 0.35pF capacitance
ON Semiconductor	NUP41060	6-channel ESD protection, 30kV HBM
STMicroelectronics	ESDA8401	Automotive-grade, 150A surge rating
Infineon	ESD320	Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

Operating voltage must be below Vbr (typically 1.1 Voper)
Clamping voltage should stay under protected IC's maximum ratings
Packaging selection based on board space and thermal requirements
Environmental factors: temperature range, humidity resistance
Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
Integration: Combo devices with filters and shielding
Higher robustness: 40kV+ ESD protection for industrial IoT
Advanced materials: Silicon carbide (SiC) for high-temperature applications
AI-driven selection tools for optimized component matching