TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMA6J400A

SMA6J400A

Rectron USA

TVS DIO 600W 400V 548V UNI SMA

0

SMA6F51CA

SMA6F51CA

Rectron USA

TVS DIO 600W 51V 82.4V BI SMAF

0

SMA6F54CA

SMA6F54CA

Rectron USA

TVS DIO 600W 54V 87.1V BI SMAF

0

5.0SMCJ200CA

5.0SMCJ200CA

Rectron USA

TVS DIODE 5KW 200V 324V BI SMC

0

TFMCJ24A

TFMCJ24A

Rectron USA

TVS DIO 1500W 24V 38.9V UNI SMC

0

TFMCJ130A

TFMCJ130A

Rectron USA

TVS DIO 1500W 130V 209V UNI SMC

0

3.0SMCJ48

3.0SMCJ48

Rectron USA

TVS DIODE 3KW 48V UNI SMC

0

4SMF5.0A

4SMF5.0A

Rectron USA

TVS 400W 5V 9.2V UNI SMAF

0

4SMF18A

4SMF18A

Rectron USA

TVS 400W 18V 29.2V UNI SMAF

0

4SMF15A

4SMF15A

Rectron USA

TVS 400W 15V 24.4V UNI SMAF

0

3KPSMC24A

3KPSMC24A

Rectron USA

TVS DIODE 3KW 29.5V SMC

0

P6FMBJ12CA

P6FMBJ12CA

Rectron USA

TVS DIODE 600W 12V 16.7V BI SMB

0

1.5FMCJ62CA

1.5FMCJ62CA

Rectron USA

TVS DIODE 1500W 53V BI-DI SMC

0

TFMCJ100A

TFMCJ100A

Rectron USA

TVS DIO 1500W 100V 162V UNI SMC

0

SMA2J19A

SMA2J19A

Rectron USA

TVS DIODE 400W 19V 30.6V UNI SMA

0

P4FMAF12A

P4FMAF12A

Rectron USA

TVS DIO 400W 12V 16.7V UNI SMAF

0

3.0SMCJ210A

3.0SMCJ210A

Rectron USA

TVS DIODE 3KW 210V UNI SMC

0

1.5FMCJ33

1.5FMCJ33

Rectron USA

TVS DIODE 1500W 26.8V UNI SMC

0

TFMCJ160CA

TFMCJ160CA

Rectron USA

TVS DIO 1500W 160V 259V BI SMC

0

1.5FMCJ9.1A

1.5FMCJ9.1A

Rectron USA

TVS DIODE 1500W 7.78V UNI SMC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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