TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MP4KE11AE3

MP4KE11AE3

Roving Networks / Microchip Technology

TVS DIODE 9.4V 15.6V DO204AL

0

SMAJ17A-M3/61

SMAJ17A-M3/61

Vishay General Semiconductor – Diodes Division

TVS DIODE 17V 27.6V DO214AC

0

SA36AHB0G

SA36AHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO204AC

0

SMM4F8.5A-TR

SMM4F8.5A-TR

STMicroelectronics

TVS DIODE 8.5V 19.5V DO222-AA

0

SMBJ18D-M3/H

SMBJ18D-M3/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 18V 28.8V DO214AA

27

SMDJ10CA R7G

SMDJ10CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO214AB

0

SM6T27CA-E3/5B

SM6T27CA-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 23.1V 37.5V DO214AA

0

P4SMA250AHM3_B/I

P4SMA250AHM3_B/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 400W 250V DO214AC

0

1.5SMC18A TR13 PBFREE

1.5SMC18A TR13 PBFREE

Central Semiconductor

TVS DIODE 15.3V 25.2V SMC

0

BZW04-110BHE3/54

BZW04-110BHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 111V 179V DO204AL

0

MXLSMCJLCE8.0A

MXLSMCJLCE8.0A

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO214AB

0

TGL34-51CA

TGL34-51CA

Diotec Semiconductor

TVS DO-213AA 43.6V 150W BI

0

MXLP4KE7.5A

MXLP4KE7.5A

Roving Networks / Microchip Technology

TVS DIODE 6.4V 11.3V DO204AL

0

MXSMCJ45CA

MXSMCJ45CA

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

SMAJ110CAE3/TR13

SMAJ110CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AC

0

SMCG7.0A-E3/57T

SMCG7.0A-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 7V 12V DO215AB

0

SMAJ16HR3G

SMAJ16HR3G

TSC (Taiwan Semiconductor)

400W 19.8V 10% UNIDIRECTIONAL TV

3590

BZW04-188B-E3/54

BZW04-188B-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 188V 301V DO204AL

0

15BJ13CA

15BJ13CA

PowerStor (Eaton)

TVS DIODE 13V 1.5KW DO214AA

0

1.5KE200AT/R

1.5KE200AT/R

EIC Semiconductor, Inc.

TVS 1500W, CASE TYPE: DO-201

5000

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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