TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
8.0SMDJ20CA

8.0SMDJ20CA

Wickmann / Littelfuse

TVS DIODE 8KW 20V 5%BI DO-214AB

0

D6V3H1U2LP4-7B

D6V3H1U2LP4-7B

Zetex Semiconductors (Diodes Inc.)

SURGE PROTECTION PP X2-DFN1006-2

60000

SMBJ58A-M3/52

SMBJ58A-M3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 58V 93.6V DO214AA

0

P6SMB13CA-Q

P6SMB13CA-Q

J.W. Miller / Bourns

TVS DIODE AECQ

0

SA48CAHR0G

SA48CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO204AC

0

TV15C151JB-HF

TV15C151JB-HF

Comchip Technology

TVS DIODE 150V 243V DO214AB

0

SPHV12-01KTG-C

SPHV12-01KTG-C

Wickmann / Littelfuse

TVS DIODE 12V 25V SOD882

19674

P6SMB27AT3G

P6SMB27AT3G

Wickmann / Littelfuse

TVS DIODE 23.1V 37.5V 425TEPBGA

147989

MASMLJ58CA

MASMLJ58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AB

0

SMBJ30CA M4G

SMBJ30CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AA

0

1KSMB22A

1KSMB22A

Wickmann / Littelfuse

TVS DIODE 18.8V 30.6V DO214AA

0

SR70-02CTG

SR70-02CTG

Wickmann / Littelfuse

TVS DIODE 70V 12V SOT143-4

0

SMBJ188AHE3/5B

SMBJ188AHE3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 188V 328V DO214AA

0

SMA6F6.0A-M3/6A

SMA6F6.0A-M3/6A

Vishay General Semiconductor – Diodes Division

TVS DIODE 6V 13.7V DO221AC

0

TV06B111J-G

TV06B111J-G

Comchip Technology

TVS DIODE 110V 177V SMB

0

SMF26A-HM3-08

SMF26A-HM3-08

Vishay General Semiconductor – Diodes Division

TVS DIODE 26V 42.1V DO219AB

0

SMP28-M3/85A

SMP28-M3/85A

Vishay General Semiconductor – Diodes Division

TVS DIODE 28V 50V DO220AA

0

SMBJ60CD-M3/H

SMBJ60CD-M3/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 60V 95.5V DO214AA

7377

SMAJ160AHR3G

SMAJ160AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AC

3600

MXLSMCJLCE8.5A

MXLSMCJLCE8.5A

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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