BCR112WE6327BTSA1

Manufacturer Part BCR112WE6327BTSA1
Manufacturer IR (Infineon Technologies)
Description TRANS PREBIAS NPN 250MW SOT323-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BCR112WE6327BTSA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:140 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
More Information
BCR112WE6327BTSA1
BCR112WE6327BTSA1
IR (Infineon Technologies) BCR112WE6327BTSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BCR112WE6327BTSA1 PDF
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Fedex 2-5 days
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